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Chemical Vapor Deposition of Copper Films: Influence Of The Seeding Layers

Published online by Cambridge University Press:  15 February 2011

Kyoung-Ryul Yoon ,
Seok Kim ,
Doo-Jin Choi ,
Ki-Hwan Kim  and
Seok-Keun Koh
Kyoung-Ryul Yoon
Affiliation:
Dept. of Ceramic Engr., Yonsei Univ., Shinchon-Dong 134, Sudaemoon-Ku, Seoul, Korea 120-749
Seok Kim
Affiliation:
Dept. of Ceramic Engr., Yonsei Univ., Shinchon-Dong 134, Sudaemoon-Ku, Seoul, Korea 120-749
Doo-Jin Choi
Affiliation:
Dept. of Ceramic Engr., Yonsei Univ., Shinchon-Dong 134, Sudaemoon-Ku, Seoul, Korea 120-749
Ki-Hwan Kim
Affiliation:
Dept. of Ceramic Engr., Yonsei Univ., Shinchon-Dong 134, Sudaemoon-Ku, Seoul, Korea 120-749
Seok-Keun Koh
Affiliation:
Div. of Ceramics, Korea Institute of Science & Technology, Cheongryang P.O. Box 131, Seoul, Korea 136-791
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Abstract

The low pressure chemical vapor deposition of Cu was investigated on TiN substrates that had been locally seeded with thin Cu layers. These Cu layers were 5Å, 40Å and 130Å thick and had been produced by PIB (Partially Ionized Beam) deposition. The growth rate and the XRD peak intensity ratio (I(111)/I(200)) of CVD-Cu increased somewhat in the case of Cu seeded TiN/Si substrates compared with as-received TiN/Si substrate. At the deposition temperature of 200°C, Cu film deposited on the 40Å seeded substrate had the lowest electrical resistivity value, 2.42 μ Ω cm that is as high as 1.5 times the bulk copper value. In adhesion test, as the seeding thickness increased from 0Å to 130Å, the adhesion strength increased from 21 N to 27 N.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 225
Copyright
Copyright © Materials Research Society 1996

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