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Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

Published online by Cambridge University Press:  25 February 2011

Takeo Hattori  and
Hiroki Ogawa
Takeo Hattori
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
Hiroki Ogawa
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
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Abstract

Chemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 31
Copyright
Copyright © Materials Research Society 1992

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References

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