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Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

Published online by Cambridge University Press:  25 February 2011

M. Takakura ,
T. Yasaka ,
S. Miyazaki  and
M. Hirose
M. Takakura
Affiliation:
Department of Electrical Engineering, Hiroshima UniversityHigashi-Hiroshima 724, Japan
T. Yasaka
Affiliation:
Department of Electrical Engineering, Hiroshima UniversityHigashi-Hiroshima 724, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima UniversityHigashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima UniversityHigashi-Hiroshima 724, Japan
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Abstract

Chemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 113
Copyright
Copyright © Materials Research Society 1992

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References

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