Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T08:16:49.717Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces

Published online by Cambridge University Press:  15 February 2011

C. H. Bjorkman ,
H. Nishimura ,
T. Yamazaki ,
J. L. Alay ,
M. Fukuda  and
M. Hirose
C. H. Bjorkman
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724
H. Nishimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
T. Yamazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
J. L. Alay
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724
M. Fukuda
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
Get access

Abstract

Surface contamination and chemical stability of hydrogen terminated Si(100) surfaces have been studied using Fourier Transform Infrared Attenuated Total Reflection (FT-IR-ATR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Hydrogen terminated Si(100) is obtained by removing the chemical oxide, formed in a low-concentration-NH4OH SC1 clean, in various HF based solutions. Using standard cleaning and loading conditions, we find a direct correlation between surface roughness and the amount of adsorbed C contamination. Oxidation during water rinsing and wafer loading observed by both FT-IR-ATR and XPS indicates that dihydride terminated silicon atoms are preferentially oxidized. Optimizing the water rinse and wafer loading conditions reduces total atomic concentration of C, O, and F surface contamination from 20–30 at.% to less than 6 at.%. These clean surfaces enable XPS-identification of the Si-Hx components of the Si 2p core-level spectra as well as estimation of the relative surface concentration of Si-Hx and contamination species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 177
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bjorkman, C.H., Fukuda, M., Yamazaki, T., Miyazaki, S., and Hirose, M., Jpn. J. Appl. Phys. 34, 722 (1995).Google Scholar
2. Alay, J.L., Ph.D. Thesis, Katholieke Universiteit Leuven, Leuven, Belgium, 1993.Google Scholar
3. Grunthaner, F.J. and Grunthaner, P.J., Mater. Sci. Rep. 1, 69 (1986).Google Scholar
4. Hirose, M., Ogura, T., Mater. Res. Soc. Symp. Proc. 75, 357 (1987).Google Scholar
5. Shirley, D.A., Phys. Rev. B 5, 4709 (1972).Google Scholar
6. Himpsel, F.J., McFeely, F.R., Taleb-lbrahimi, A., Yarmoff, J.A., and Hollinger, G., Phys. Rev. B 38, 6084 (1988).Google Scholar
7. Mitchell, D.F., Clark, K.B., Bardwell, J.A., Lennard, W.N., Massoumi, G. R, and Mitchell, I.V., Surf. Interface Anal. 21, 44 (1994).Google Scholar