Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T18:04:32.560Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge Trapping Sites in nc-RuO Embedded ZrHfO High-k Nonvolatile Memories

Published online by Cambridge University Press:  01 February 2011

Chen-Han Lin  and
Yue Kuo
Chen-Han Lin
Affiliation:
[email protected], Texas A&M University, Thin Film Nano & Microelectronics Research Laboratory, College Station, Texas, United States
Yue Kuo
Affiliation:
[email protected], Texas A&M University, Thin Film Nano &
Get access

Abstract

Materials and electrical properties of the MOS capacitor containing nc-RuO embedded in the high-k ZrHfO dielectric film have been studied. The electron- and hole-trapping capacities and trapping sites in this kind of device were investigated using the constant voltage stress method, the frequency-dependent C-V measurement, and the retention characteristics. The negligible charge trapping phenomenon in the non-embedded device rules out the possibility of any trapping site in the bulk ZrHfO film or at the Si/ZrHfO interface. The electrical characterization result suggests that electrons are trapped in the bulk nc-RuO. However, holes have two possible trapping sites, i.e., in the bulk nc-RuO or at the nc-RuO/ZrHfO interface.

Keywords

dielectricdielectric propertiesmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G01-08
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tiwari, S. Rana, F. Hanafi, H. Hartstein, A. Crabbé, E. F., and Chan, K. in Appl. Phys. Lett., vol. 68, p. 1377, 1996.10.1063/1.116085Google Scholar
2 Hanafi, H. I. Tiwari, S. and Khan, I. in IEEE Trans. on Electron Devices, vol. 43, p. 1553, 1996.10.1109/16.535349Google Scholar
3 Kanoun, M. Souifi, A. Baron, T. and Mazen, F. in Appl. Phys. Lett., vol. 84, p. 5079, 2004.10.1063/1.1751227Google Scholar
4 Lin, C.-H. and Kuo, Y. in Electrochem. Solid-State Lett., vol. 13, p. H83, 2010.10.1149/1.3276055Google Scholar
5 Wang, C.-C. Wu, J.-Y. Chiou, Y.-K. Chang, C.-H. and Wu, T.-B. in Appl. Phys. Lett., vol. 91, p. 202110, 2007.10.1063/1.2804567Google Scholar
6 Tseng, J.-Y. Cheng, C.-W. Wang, S.-Y. Wu, T.-B. Hsieh, K.-Y. and Liu, R. in Appl. Phys. Lett., vol. 85, p. 2595, 2004.10.1063/1.1795976Google Scholar
7 Ryu, S.-W. Mo, C. B. Hong, S. Y. and Choi, Y.-K. in IEEE Trans. on Nanotechnology, vol. 7, p. 145, 2008.Google Scholar
8 Samanta, S. K. Yoo, W. J. Samudra, G. Tok, E. S. Bera, L. K. and Balasubramanian, N., in Appl. Phys. Lett., vol. 87, p. 113110, 2005.10.1063/1.2045555Google Scholar
9 Birge, A. Lin, C.-H. and Kuo, Y, in J. Electrochem. Soc., vol. 154, p. H887, 2007.10.1149/1.2768291Google Scholar
10 Lin, C.-H. and Kuo, Y. in ECS Trans., vol. 13, p. 465, 2008.10.1149/1.2911531Google Scholar
11 Lin, Y.-H. Chien, C.-H. Lin, C.-T. Chang, C.-Y. Lei, T.-F. in IEEE Trans. on Electron Devices, vol. 53, p. 782, 2006.10.1109/TED.2006.885651Google Scholar
12 Krusin-Elbaum, L. and Wittmer, M. in J. Electrochem. Soc., vol. 135, p. 2610, 1988.10.1149/1.2095391Google Scholar
13 Lee, J. J. Wang, X. Bai, W. Lu, N. and Kwong, D. L. in IEEE Trans. on Electron Devices, vol. 50, p. 2067, 2003.Google Scholar
14 Wilk, G. D. Wallace, R. M. and Anthony, J. M. in Appl. Phys., vol. 89, p. 5243, 2001.10.1063/1.1361065Google Scholar
15 Kang, L. Lee, B. H. Qi, W.-J. Jeon, Y. Nieh, R. Gopalan, S. Onishi, K. and Lee, J. C. in IEEE Electron Device Lett., vol. 21, p. 181, 2000.10.1109/55.830975Google Scholar
16 Lu, J. J, Yan, Chatterjee, S. Kim, H. C. and Kuo, Y. in 6th AVS Symposium and International Conference on Microelectronics and Interfaces, p. 47, 2005.Google Scholar
17 Maikap, S. Wang, T. Y. Tzeng, P. J. Lin, C. H. Lee, L. S. Yang, J. R. and Tsai, M. J. in Appl. Phys. Lett., vol. 90, p. 253108, 2007.10.1063/1.2749857Google Scholar
18 Hauser, J. and Ahmed, K. in Characterization and Metrology for ULSI Technology, p. 235, AIP, New York, 1998.Google Scholar
19 Lin, C.-H. and Kuo, Y. in ECS Trans., vol. 16, p. 309, 2008.10.1149/1.2981612Google Scholar
20 Yan, J. Kuo, Y. and Lu, J. in Electrochem. Solid-State Lett., vol. 10, p. H199, 2007.10.1149/1.2730720Google Scholar
21 Jin, H. Oh, S. K. Kang, H. J. and Cho, M.-H. in Appl. Phys. Lett., vol. 89, p. 122901, 2006.10.1063/1.2355453Google Scholar
22 Huang, S. Banerjee, S. Tung, R. T. and Oda, S. in J. Appl. Phys., vol. 93, p. 576, 2003.10.1063/1.1529094Google Scholar
23 Lee, J.-S. Kim, Y.-M. Kwon, J.-H. Shin, H. Sohn, B.-Y. and Lee, J. in Adv. Mater., vol. 21, p. 178, 2009.10.1002/adma.200800340Google Scholar