Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T09:15:46.830Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of APBs in GaAs Grown on Si and Ge

Published online by Cambridge University Press:  28 February 2011

C.B. Carter ,
N.-H. Cho ,
S. Mckernan  and
D.K. Wagner
C.B. Carter
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
N.-H. Cho
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
S. Mckernan
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
D.K. Wagner
Affiliation:
McDonnell Douglas OEC, 350 Executive Boulevard, Elmsford, NY 10523
Get access

Abstract

Antiphase boundaries are observed in epilayers of GaAs grown by organometallic vapor phase epitaxy on Ge substrates and are then invariably found to show a tendency to facet. Stacking-fault-like fringes caused by the translation of adjacent grains give the information on the relative displacement of the two grains at these interfaces and show that this translation does not have a fixed magnitude for a particular interface but varies with the orientation of the interface. Preferred orientations of the antiphase boundaries and the rigid-body translations have been studied using transmission electron microscopy. Interactions between antiphase boundaries and interfaces have been examined here in heterolayer structures consisting of alternating layers of GaAs and AlxGal−xAs grown on an (001) Ge substrate. The possibility of using atomic-resolution imaging to investigate the atomic structure of APBs is illustrated and the images are compared with those predicted by image simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 181
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Holt, D.B., J. Phys. Chem. Solids,(1969) 30, 1297 Google Scholar
2. Barber, H.D. and Heasell, E.L., J. Phys. Chem. Solids, (1965) 26, 1561 Google Scholar
3. Morizane, K., J. Cryst. Growth, (1977) 38, 249 Google Scholar
4. Cho, N.-H., De Cooman, B.C., and Carter, C.B., Appl. Phys. Lett. (1985) 47(8),879 Google Scholar
5. Chang, Chin-An and Kuan, Tung-Sheng, (1983) J. Vac. Sci. Technol. B 1(2), 315 Google Scholar
6. Holt, D.B., J. Phys. Chem. Solids, (1962) 23, 1353 Google Scholar
7. Neave, L.H., Larsen, P.K., Joyce, B.A., Gowers, J.P. and van der Veen, J.F., J. Vac. Sci. Technol. (1983) B1 (3), 668 Google Scholar
8. Carter, C.B., De Cooman, B.C., Cho, N.-H., Fletcher, R.M., Wagner, D.K. and Ballantyne, J., (1985),Mat. Res. Soc. Symp. Proc. 56, 73 (1986).Google Scholar
9. Carter, C.B., Donald, A.M. and Sass, S.L., Phil. Mag.A 39, 533 (1979).Google Scholar
10. Provided by Mike O'Keefe, Dr., Berkeley Labs, Lawrence, Ca.Google Scholar