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Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric

Published online by Cambridge University Press:  17 March 2011

R. A. Donaton ,
B. Coenegrachts ,
E. Sleeckx ,
M. Schaekers ,
G. Sophie ,
N. Matsuki ,
M. R. Baklanov ,
H. Struyf ,
M. Lepage  and
S. Vanhaelemeersch
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R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
B. Coenegrachts
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
E. Sleeckx
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Schaekers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Sophie
Affiliation:
ASM Japan, 6-23-1, Nagayama, Tama, Tokyo, Japan
N. Matsuki
Affiliation:
ASM Japan, 6-23-1, Nagayama, Tama, Tokyo, Japan
M. R. Baklanov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Struyf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Lepage
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Vanhaelemeersch
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Beyer
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Stucchi
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
D. De Roest
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC and E.E. Department, K. U. Leuven, Belgium
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Abstract

AURORA films, which have a Si-O-Si network with –CH3 terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore size (∼ 0.6 nm) found could be advantageous during integration of AURORA. Integration of AURORA into Cu single damascene structures was successfully achieved. Suitable resist strip processes, which are critical for Si-O-C type materials, were developed, resulting in trenches with satisfactory profiles. After a complete single damascene process, a interline dielectric constant value of 2.7 was found for line spacing down to 0.25 µm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.14.1
Copyright
Copyright © Materials Research Society 2000

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References

[1] Russel, S.W., McKerrow, A.J., Shih, W.-Y., Singh, A., List, R.S., Ralston, A.R.K., Lee, W.W., Newton, K.J., Chang, M.-C., and Havemann, R.H., Proc. ULSI XIII, 1998, pp.289–300.Google Scholar
[2] MRS Bulletin 22, Oct 1997.Google Scholar
[3] Peters, L., Semiconductor International 22, 1999, pp.56–64.Google Scholar
[4] Matsuki, N., Matsunoshita, A., Lee, J.S., Morisada, Y., Naito, Y., and Merritt, C., 2000 Proceedings Sixth International Dielectrics for ULSI Multilevel Interconnection Conference (DUMIC), pp. 151 to 160.Google Scholar
[5] Loboda, M. J., Seifferly, J.A., Schneider, R.F., and Grove, C.M., Proceedings of the Symposia on Electrochemical Processing in ULSI Fabrication I and Interconnect and Contact Metallization: Materials, Processes, and Reliability. Electrochem. Soc, Pennington, NJ, USA; 1999; viii+274 pp. 145–52.Google Scholar
[6] Baklanov, M.R., Mogilnikov, K.P., Polovinkin, V.G., and Dultsev, F.N., J. Vac. Sci. Technol. B 18(3), May/June 2000.Google Scholar
[7] Baklanov, M.R. and Mogilnikov, K.P, to be published in Mat. Res. Soc. Symp. Proc., Symposium D: “Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics”, 2000 MRS Spring Meeting.Google Scholar