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Characteristics of Organic Memory Using Metal Oxide Nano-clusters

Published online by Cambridge University Press:  01 February 2011

You-Wei Cheng ,
Tzu-Yueh Chang  and
Po-Tsung Lee
You-Wei Cheng
Affiliation:
[email protected], National Chiao Tung University, Department of Photonics & Display Institute, Hsinchu, Taiwan, Province of China
Tzu-Yueh Chang
Affiliation:
[email protected], National Chiao Tung University, Department of Photonics & Institute of Electro-Optical Engineering, hsinchu, Taiwan, Province of China
Po-Tsung Lee
Affiliation:
[email protected], National Chiao Tung University, Department of Photonics & Institute of Electro-Optical Engineering, hsinchu, Taiwan, Province of China
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Abstract

In this report, electrical properties of an organic memory device with a tri-layer structure, MoO3 nano-clusters layer sandwiched between Alq3 thin films, are investigated. The device using this kind of structure exhibits a large ON/OFF density current ratio over 104, long retention time over 1hr, and an electrically programmable character. The formation of the bistable resistance switching of the device originates from a charge trapping effect of the MoO3 nano-clusters layer. Moreover, current density-voltage (J-V) characteristics of the device are quite different from those of OBDs using MoO3 nano-particles. No negative differential resistance is observed in the J-V curve of the device. This may be due to the distinct surface morphology of the MoO3 layer on the Alq3 thin film.

Keywords

organicmorphologymemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G17-03
Copyright
Copyright © Materials Research Society 2010

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