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Characteristics of Amorphous Silicon Based Alloy Field Effect Transistors

Published online by Cambridge University Press:  21 February 2011

M. Shur ,
M. Hack  and
C. Hyun
M. Shur
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455.
M. Hack
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
C. Hyun
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455.
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Abstract

We have developed a new theory to describe the current-voltage characteristics of amorphous silicon based alloy field effect transistors. We show that the transition from below to above threshold operation occurs when the Fermi level in the accumulation region moves from the deep to tail localized states in the energy gap and that the field effect mobility is dependent on gate voltage. We also propose a new technique to determine the flat-band voltage from the I-V characteristics in the below threshold regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 307
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Shur, M. and Hack, M., to be published, J. Appl. Phys., R-4972, May (1984).Google Scholar
2. Chen, I. and Lee, S., J. Appl. Phys. 53, 1045 (1982).Google Scholar
3. Kishida, S., Narube, Y., Uchida, Y. and Matsumara, M., Jap. J. Appl. Phys., 22, 3, 511 (1983).CrossRefGoogle Scholar
4. Powell, M. J. and Pritchard, J., J. Appl. Phys. 54(6), 3244 (1983).10.1063/1.332486Google Scholar
5. Grove, A. S., Physics and Technology of Semiconductor Devices, J. Wiley, (1967).Google Scholar
6. Nara, Y. and Matsumara, M., IEEE Trans. on Elec. Dev. ED-29(10), 1646 (1982).10.1109/T-ED.1982.20933Google Scholar
7. Thompson, M. J., Johnson, N. M., Moyer, M. D. and Lujan, R., IEEE Trans. on Elec. Dev. ED-29(10), 1643 (1982).CrossRefGoogle Scholar
8. Matsumara, M., United States-Japan Joint Seminar on “Technological Appl. of Tetrahedral Amorph. Solids”, Palo Alto, California (1982).Google Scholar
9. Huang, C. Y., Guha, S. and Hudgens, S. T., Phys. Ref. B 27(12), 7460 (1983).Google Scholar
10. Shur, M., Hack, M., Hyun, C., to be published, J. Appl. Phys., R-5259.Google Scholar