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Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  27 January 2014

Yongkun Sin ,
Stephen LaLumondiere ,
William Lotshaw  and
Steven C. Moss
Yongkun Sin
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Stephen LaLumondiere
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
William Lotshaw
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Steven C. Moss
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
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Abstract

We investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

Keywords

III-Voptoelectronicradiation effects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 43 - 48
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

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