Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T09:50:44.085Z Has data issue: false hasContentIssue false

Borophosphosilicate Glass(BPSG) Fusion Using Rapid Thermal Annealing and Steam Reflow: Physical Properties and Device Implications

Published online by Cambridge University Press:  22 February 2011

Mike Maxim
Affiliation:
Intel Corporation, California Technology and Manufacturing, Santa Clara, CA., 95052
Mansour Moinpour
Affiliation:
Intel Corporation, California Technology and Manufacturing, Santa Clara, CA., 95052
John Chu
Affiliation:
Intel Corporation, California Technology and Manufacturing, Santa Clara, CA., 95052
Hien Nguyen
Affiliation:
Intel Corporation, California Technology and Manufacturing, Santa Clara, CA., 95052
Phil Freiberger
Affiliation:
Intel Corporation, California Technology and Manufacturing, Santa Clara, CA., 95052
Nicky Stenton
Affiliation:
Intel Corporation, California Technology and Manufacturing, Santa Clara, CA., 95052
Get access

Abstract

With decreasing device geometry to below sub micron dimensions, there is a greater emphasis on reducing the thermal budget by shortening and/or eliminating high temperature processing steps. The use of RTP for borophosphosilicate glass (BPSG) fusion/reflow process, which is conventionally performed in diffusion furnaces in temperature range of 850-900 °C, has gained some acceptance in recent years. BPSG films were prepared by an atmosphericpressure chemical vapor deposition(APCVD) process. BPSG film properties such as stress, shrinkage, dopant uniformity and surface stability, step coverage, and flow angle, have been examined as a function of densification/reflow cycle. We used RTP-only, furnace-only, and RTP/furnace reflow annealing cycles. The impact of various BPSG fusion scenarios on underlying Ti salicide and P-channel and N-channel devices is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kern, W. and Smeltzer, R., Solid State Technology, Vol. 28, No. 6, pp. 171179, 1985.Google Scholar
[2] Kern, W. and Schnable, G. L., RCA Rev. Vol. 43, pp. 423437, 1982.Google Scholar
[3] Coniff, J., Krott, L., Shenasa, M. and Woessner, S., presented at the 183rd meeting of the Electrochemical Society, Honolulu, Hawaii, May 16-21, 1993.Google Scholar
[4] Shenasa, M., Coniff, J. and Kudla, J.P., presented at the 183rd meeting of the Electrochemical Society, Honolulu, Hawaii, May 16-21, 1993.Google Scholar
[5] Yano, K., Terai, Y., Imai, S., Ueda, T., Ueda, S., Endoh, M. and Nomura, N., Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, pp. 105107, 1992.Google Scholar
[6] Ahmed, K. and Geisert, C., J. Vac. Sci. Technol., Vol. 10, No. 2, pp. 313315, 1992.Google Scholar
[7] Kern, W. and Kurylo, W. A., RCA Rev., Vol. 46, pp. 117126, 1985.Google Scholar
[8] Moinpour, M., Leitch, R., Li, I., Thach, D., and Moghadam, F., Mat. Res. Soc. Symp. Proc. Vol. 315, pp. 117123, 1993.Google Scholar
[9] Mercier, J., Solid State Technology, pp. 8591, 1987.Google Scholar
[10] Gloesener, D., Rivas, G., Goffin, B., Coppee, J.L., and Wiele, F. Van de, Proc. of VMIC Conf., pp. 4350, 1988.Google Scholar
[11] Rojhantalab, H., Moinpour, M., Peter, N., Dass, M.L.A., Hough, W., Natter, R., and Moghadam, F., Mat. Res. Soc. Symp. Proc. Vol. 280, pp. 147151, 1993.Google Scholar
[12] Bird, R.B., Stewart, W.E., and Lighthood, E.N., Transport Phenomena, Wiley, 1960.Google Scholar
[13] Fang, Y.K., Hsieh, J.C., Chen, C.W., Koung, C.H., Tsai, N.S.. Lee, J.Y., and Tseng, F.C., Appl. Phys. Lett., Vol. 61, No. 4, pp. 447449, 1992.Google Scholar