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Behavior of Defects Related to Interface-Stresses in Model Submicron Soi Structures

Published online by Cambridge University Press:  22 February 2011

N. D. Theodore ,
C. B. Carter ,
S. C. Arney  and
N. C. MacDonald
N. D. Theodore
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
S. C. Arney
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
N. C. MacDonald
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

The origin and propagation of defects in novel submicron SOI structures have been investigated by transmission electron microscopy. The majority of the defect configurations observed could be explained in terms of dislocations generated as a result of stresses induced by the oxidation process. Dislocations were found to propagate into the silicon along particular {111} planes in conformity with stress-modelling. The examination of particular dislocation configurations allowed an estimation of the stresses at the silicon/ silicon dioxide interface. Defect densities were observed to depend on the geometry of the structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 377
Copyright
Copyright © Materials Research Society 1989

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References

1. Imai, K. and Unno, H., IEEE Trans. Elect. Dev. ED–31 (3), 297 (1984)10.1109/T-ED.1984.21518Google Scholar
2. Geis, M.W., Smith, H.I., Tsaur, B-Y., Fan, J.C.C., Silversmith, D.J., and Mountain, R.W., J. Electrochem. Soc. 129 (12), 2812 (1983)Google Scholar
3. Hemment, P.L.F., Maydell-Ondrusz, E., Stephens, K.G., Butcher, J.B., Ioannou, D., and Alderman, J.C., Nucl. Inst. and Methods, 157 (1983). The Netherlands: North Holland.Google Scholar
4. Appels, J.A., Kooi, E., Paffen, M.M., Schatorje, J.J.H., and Verkuylen, W.H.G.G., Phillips Res. Rep. 25, 118 (1970)Google Scholar
5. Vanhellemont, J., Amelinckx, S. and Claeys, C., J. Appl. Phys. 61 (6), 2176 (1987)Google Scholar
6. Shibata, K. and Taniguchi, K., J. Electrochem. Soc. 127 (6), 1383 (1980)Google Scholar
7. Tamaki, Y., Isomae, S., Mizuo, S. and Higuchi, H., J. Electrochem. Soc. 128 (3), 644 (1981)Google Scholar
8. Tamaki, Y., Isomae, S., Mizuo, S. and Higuchi, H., J. Electrochem. Soc. 130 (11), 2267 (1983)Google Scholar
9. Bohg, A. and Gaind, A.K., Appl. Phys. Lett. 33 (10), 895 (1978)Google Scholar
10. Sagara, K., Tamaki, Y., and Kawamura, M., J. Electrochem. Soc. 134 (2), 500 (1987)10.1149/1.2100489CrossRefGoogle Scholar
11. Sheng, T.T. and Marcus, R.B., J. Electrochem. Soc. 127 (3), 737 (1980)Google Scholar
12. Arney, S.C. and MacDonald, N.C., J. Vac. Sci. and Tech. B6 (1), 341 (1988)CrossRefGoogle Scholar