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Automatic Determination of In-Depth Profiles of Recombination Lifetime in Epitaxial Si Layer with P+-N−-N+ Stripe Test Pattern Diodes

Published online by Cambridge University Press:  15 February 2011

Akira Usami ,
Yoshimaro Fujii ,
Hideki Fujiwara ,
Tomiyasu Sone  and
Takao Wada
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Yoshimaro Fujii
Affiliation:
HAMAMATSU PHOTONICS K.K., 1126-1, Ichino-cho, Hamamatsu 435, Japan
Hideki Fujiwara
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Tomiyasu Sone
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

Recombination lifetime of a epitaxial layer (epilayer) is automatically measured by using the conductivity modulation technique. A lateral p+-n−-n+ diode test structure on the surface of the epilayer is formed to evaluate the minority carrier lifetime. Depth profiles of the recombination lifetime are obtained from current-voltage curves of a lateral p+-n−-n+ diode and a vertical n+-n−-n+ structure between the substrate and the top surface. We measure the lifetime in epilayers with and without a buffer-layer. In addition, photo-response of photodiodes with and without the buffer-layer is measured. Profiles of the recombination lifetime depend on the thickness of the epilayer but not on the thickness of the buffer-layer. Minority carrier lifetime in the epilayer, and the leakage current and the photo-response of photodiodes are improved by the buffer-layer formation between epilayer and substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 265
Copyright
Copyright © Materials Research Society 1991

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References

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