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Atomic Scale Nitridation of Silicon Oxide Surfaces by Remote-Plasma-Excited Nitrogen

Published online by Cambridge University Press:  21 March 2011

Yoji Saito  and
Koichi Tokuda
Yoji Saito
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, 3-3-1 Kichijoji-Kitamachi, Musashino, Tokyo 180-8633, Japan
Koichi Tokuda
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, 3-3-1 Kichijoji-Kitamachi, Musashino, Tokyo 180-8633, Japan
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Abstract

We have incorporated several percent of nitrogen only near the top surfaces of thermally grown oxides by exposure to fluorine gas at room temperature followed by an atomic nitrogen treatment at 550°C. The depth profiles and the bonding of incorporated nitrogen atoms have been studied by angle-resolved x-ray photoelectron spectroscopy.

MOS devices were fabricated using the nitrided oxide with boron doped polycrystalline silicon gate. From the capacitance-voltage measurements we confirmed that the nitrided oxide would prevent the boron penetration in comparison with the conventional oxide films. The proposed technique identifies a unique process for obtaining high quality ultrathin dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K7.9
Copyright
Copyright © Materials Research Society 2001

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References

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