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Atomic Layer Deposition of Silica and Group IV Metal Oxides Nanolaminates

Published online by Cambridge University Press:  01 February 2011

Lijuan Zhong ,
Fang Chen ,
Stephen A. Campbell  and
Wayne L. Gladfelter
Lijuan Zhong
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Fang Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Stephen A. Campbell
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Wayne L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455, U.S.A.
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Abstract

With alternating exposure of Si (100) substrates to tri (t -butoxy) silanol and anhydrous zirconium nitrate, mixed films of zirconia and silica were deposited at 162°C. The films were atomically smooth and their thickness was uniform across the entire substrate. The maximum growth rate of 12 Å/cycle implies deposition of more than one monolayer per cycle. A singular reflection in the low angle X-ray scattering pattern indicates an ordered bi-layer structure. Similar nanolaminate structures were also formed using anhydrous nitrates of hafnium and tin.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E6.24
Copyright
Copyright © Materials Research Society 2004

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References

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