Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T08:58:15.307Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Scatterometry to BEOL Measurements: Post Cu CMP Measurements

Published online by Cambridge University Press:  01 February 2011

Deepak Kulkarni ,
Shom Ponoth ,
Li Wu ,
Rui Fang ,
Xiaoping Liu  and
Alex Elia
Deepak Kulkarni
Affiliation:
[email protected], IBM, Systems and Technology group, 19 Canterbury Lane, Apt C, Wappingers Falls, NY, 12590, United States
Shom Ponoth
Affiliation:
[email protected], IBM Research, Hopewell Junction, NY, 12533, United States
Li Wu
Affiliation:
[email protected], Timbre Technologies, Santa Clara, CA, 95054, United States
Rui Fang
Affiliation:
[email protected], IBM, Systems and Technology group, Hopewell Junction, NY, 12533, United States
Xiaoping Liu
Affiliation:
[email protected], Timbre Technologies, Santa Clara, CA, 95054, United States
Alex Elia
Affiliation:
[email protected], Timbre Technologies, Hopewell Junction, NY, 12533, United States
Get access

Abstract

With shrinking interconnect dimensions, as a result of scaling, resistance variations in percentage terms are increasing. Quick and reliable measurements on the interconnect structures are the first step to the detection and implementation of a process-control strategy in order to reduce process related variations. This paper discusses the application of Optical Digital Profilometry (ODP) to the measurement of BEOL parameters, specifically the measurement of post copper-CMP metal dimensions with the intention of understanding CMP related contribution to resistance variations. Traditionally a combination of electrical test, optical metrology and profilometry is needed to understand the contribution of CMP to the interconnect and inter-layer-dielectric (ILD) dimensions. This paper discusses the successful use of ODP to model and measure the dimensions of both the metal and the dielectric in nested patterned structures with different pattern densities for a single level patterned build. Hence this technique could potentially simplify and replace multiple measurement techniques and help in quickly providing relevant information for process monitoring and control.

Keywords

CMPmicroelectronicsscanning electron microscopy (SEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C12-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Allgair, John, Bunday, Benjamin, “Review of Scatterometry for Three-Dimensional Semiconductor Feature Analysis”, Future Fab Intl., Volume 19 Google Scholar
2. Sendelbach, M. and Archie, C., “Scatterometry measurement precision and accuracy below 70 nm,” Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor, Proceedings of SPIE, Vol.5038, pp. 224–238, 2003.Google Scholar
3. Sendelbach, M., Munoz, A., Bandy, K., Prager, D., and Funk, M., “Integrated scatterometry in high volume manufacturing for polysilicon gate etch control,” in Metrology, Inspection, and Process Control for Microlithography XX, edited by Chas N. Archie, Proceedings of SPIE Vol. 6152 (SPIE, Bellingham, WA, 2006), Article 61520F.Google Scholar