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Anneal Behavior of Zn Implanted InP : Furnace and Rapid Thermal Anneals

Published online by Cambridge University Press:  28 February 2011

M. Djamei ,
E.V.K. Rao  and
P. Krauz
M. Djamei
Affiliation:
Centre National d'Etudes des TélécommunicationsLaboratoire de Bagneux196 avenueHenri Ravera - 92220BAGNEUX - FRANCE
E.V.K. Rao
Affiliation:
Centre National d'Etudes des TélécommunicationsLaboratoire de Bagneux196 avenueHenri Ravera - 92220BAGNEUX - FRANCE
P. Krauz
Affiliation:
Centre National d'Etudes des TélécommunicationsLaboratoire de Bagneux196 avenueHenri Ravera - 92220BAGNEUX - FRANCE
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Abstract

It is shown here that high-dose Zn implants in semi-insulating InP substrates, after conventional furnace anneals lead to the following anomalies : step-like atomic Zn and carrier distributions and the presence of electrically inactive Zn at all depths of the profiles.

Zn anneal behavior is compared using conventional furnace anneals, and two different types of short-time anneals ; rapid furnace anneals(RFA)at ∼750°C with a rise-time of ∼ 50 s, and halogen lamp rapid thermal anneals (RTA)also at ∼ 750°C with a rise-time of ∼ 4 s. We have established that the Zn anomalous diffusion is an instantaneous phexomenon occuring during annealing transients. Also, we have further shown that RTA would help to smooth carrier profiles by removing the step in carrier (but not in atomic Zn) distribution.

The properties of differently Zn co-implanted layers (Zn plus P, Zn plus In and Zn plus As) after RTA, and of P or In implanted Zn doped InP substrates after different anneals,have been studied. We have shown that the presence of electrically inactive Zn in the depth of the layers is a consequence of interaction between Zn atoms and defects. A simple model based on the density of damage deposited in the layer during implant, has been proposed and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 455
Copyright
Copyright © Materials Research Society 1987

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References

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