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An Investigation of Boron Incorporation in SiGe MBE

Published online by Cambridge University Press:  22 February 2011

C. P. Parry ,
R. A. Kubiak ,
S. M. Newstead ,
T. E. Whall  and
E. H. C. Parker
C. P. Parry
Affiliation:
Dept of Physics, University of Warwick, Coventry CV4 7AL, England.
R. A. Kubiak
Affiliation:
Dept of Physics, University of Warwick, Coventry CV4 7AL, England.
S. M. Newstead
Affiliation:
Dept of Physics, University of Warwick, Coventry CV4 7AL, England.
T. E. Whall
Affiliation:
Dept of Physics, University of Warwick, Coventry CV4 7AL, England.
E. H. C. Parker
Affiliation:
Dept of Physics, University of Warwick, Coventry CV4 7AL, England.
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Abstract

The performance of many Si/SiGe devices, particularly those involving modulation doped quantum wells, will depend on the quality of the matrix and doping interfaces involved. These may be adversely affected by profile smearing of Ge and the dopant. A study of boron incorporation in SiGe, as a function of substrate temperature and Ge fraction, shows a marked difference in profile smearing for boron in Si and in the SiGe alloy. This is shown to be associated with a reduction in the temperature for transition from equilibrium to kinetically limited accumulation in the alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 79
Copyright
Copyright © Materials Research Society 1991

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References

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