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An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

C. S. McCormick ,
C. E. Webe  and
J. R. Abelson
C. S. McCormick
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801.
C. E. Webe
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801.
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801.
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Abstract

We deposit hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125°C, which is low enough to allow the use of plastic substrates. We characterize the structural properties of the a-Si:H channel and a-SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V-s, a Ion/Ioff ratio of 5 × 105, a sub-threshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 53
Copyright
Copyright © Materials Research Society 1997

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References

1. Feng, M.S., Liang, C.W., and Tseng, D., J. Electrochemical Soc. 141, 1040 (1994).Google Scholar
2. Liao, W., Lin, C., and Lee, S., Appl. Phys. Lett. 65, 2229 (1994).Google Scholar
3. Perrin, J., in Plasma Deposition of Amorphous Silicon-Based Materials, ed. by Bruno, G., Capezzuto, P., and Madan, A. (Academic Press), 177 (1995).Google Scholar
4. Pinarbasi, M., Maley, N., Myers, A.M., and Abelson, J.R., Thin Solid Films 171, 217 (1989).Google Scholar
5. McCormick, C.S., Weber, C.E., and Abelson, J.R., in preparation.Google Scholar
6. Liang, Y.H., Yang, S.Y., Nuruddin, A., and Abelson, J.R., Mat. Res. Soc. Symp. Proc. 336, 589 (1994)Google Scholar
7. Crowley, J.L. “PECVD vs. DC Magnetron Sputtering for TFT Fabrication: A cost of ownership Analysis,” (Intevac Report, 1993).Google Scholar
8. Kolodziej, A. and Nowak, S., Thin Solid Films 175, 37 (1989).Google Scholar
9. Abelson, J.R., “[Sputtered] Hydrogenated Amorphous Silicon, Silicon Carbide, and Micro-crystalline Silicon,” in Handbook of Thin Film Deposition, (Institute of Physics, 1995) p. X2.2:1.Google Scholar
10. Doyle, J.R., Nuruddin, A., and Abelson, J.R., J. Vac. Sci. Tech. A 12, 886 (1994).Google Scholar
11. Kuo, Y., J. Electrochemical Soc. 142, 186 (1995).Google Scholar
12. Morimoto, A., Phys. Stat. Sol. B 63, 715 (1983).Google Scholar
13. Fitzner, M., Abelson, J. R., and Kanicki, J., Mat. Res. Soc. Sym. Proc. 258, 649 (1992).Google Scholar
14. Li, T., Kanicki, J., Fitzner, M., Warren, W.L., AMLCD 1995 Workshop Proceedings, Lehigh University, (1995).Google Scholar
15. Mask set designed for the ARPA Active Matrix Flat Panel Display Program and Supplied by the Intevac Corp.Google Scholar
16. Nuruddin, A., Doyle, J.R., and Abelson, J.R., J. Appl. Phys. 76, 3123 (1994).Google Scholar