Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T08:51:22.351Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous IGZO TFTs and Circuits on Highly Flexible and Dimensionally Stable Kovar (Ni-Fe alloy) Metal Foils

Published online by Cambridge University Press:  22 September 2011

Shahrukh A. Khan ,
Xiaoxiao Ma ,
Nack Bong Choi  and
Miltiadis Hatalis
Shahrukh A. Khan
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Xiaoxiao Ma
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Nack Bong Choi
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Miltiadis Hatalis
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Get access

Abstract

We have fabricated high performance amorphous IGZO TFTs and integrated circuits on flexible kovar (Ni-Fe 42 alloy) foils. Excellent dimensional stability on kovar foils is obtained by a pre-anneal process at 800°C that limits the thermal run-out to within 100ppm. After substrate annealing, Ni-Fe 42 alloy retains high yield strength and good flexibility with the re-crystallized structure containing large isotropic grains between 20-50μm. Amorphous IGZO TFTs and circuits with a staggered, bottom-gate architecture are fabricated and tested. Non-flexed TFTs have field effect mobility of 12 cm2/V.s, threshold voltage around 2 V and sub-threshold swing of 0.6 V/decade and ON/OFF current ratio exceeding 107. Under prolonged uniaxial tensile strain upto 0.8%, TFTs exhibited minimal change in performance which augers well for use of Ni-Fe foil as flexible substrates. To demonstrate the viability of oxide-based device integration, n-type pseudo logic ring oscillator circuits are also evaluated. Sub 300 ns propagation delay is confirmed at a rail-rail supply voltage of 40 V. The results suggest that device integration on such a highly flexible substrate is amenable to roll-to-roll processing of future electronics.

Keywords

thin filmcrystallographic structuredevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f08-16
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Stein, A., Liss, A., Dintinger, W., Rosedale, J., Hester, C., SID Int. Symp. XXVII, 11 (1996).Google Scholar
[2] Cheon, J. H., Choi, J. H., Hur, J. H., Jang, J., Shin, H. S., Jeong, J. K., Mo, Y. G., and Chung, H. K., IEEE Trans. Electron Devices, 53, 1273 (2006).Google Scholar
[3] Ma, E. Y. and Wagner, S., Mater. Res. Soc. Symp. Proc. 507, 13(1998).Google Scholar
[4] Ma, X. and Hatalis, M.K., Flextech Conf. Proc.. (2010)Google Scholar
[5] Jamshidi-Roudbari, A., Khan, S.A., Hatalis, M.K., IEEE Electron Device Letters, 31, 320 (2010).Google Scholar
[6] Chen, J-Z., Cheng, I-C., Wagner, S, Jackson, W., Perlov, C., and Taussig, C., Mater. Res. Soc. Symp. Proc. 989 (2007).Google Scholar
[7] Gleskovaa, H. and Wagner, S., J. Appl. Phys. 92, 6224 (2002).Google Scholar
[8] Khan, S.A., Kuo, P-C., Jamshidi-Roudbari, A and Hatalis, M. K., Device Res. Conf. Proc. 5551869 (2010).Google Scholar
[9] Ofuji, M., Abe, K., Shimizu, H., Kaji, N., Hayashi, R., Sano, M., Kumomi, H., Nomura, K., Kamiya, T., and Hosono, H., IEEE Electron Device Letters, 28, 273 (2007).Google Scholar