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Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface

Published online by Cambridge University Press:  26 June 2014

Aleksey I. Mikhaylov ,
Alexey V. Afanasyev ,
Victor V. Luchinin ,
Sergey A. Reshanov  and
Adolf Schöner
Aleksey I. Mikhaylov
Affiliation:
Acreo Swedish ICT AB, Electrum 236, 16440 Kista, Sweden SPbETU ”LETI”, Prof. Popov st. 5, 197376 St. Petersburg, Russia
Alexey V. Afanasyev
Affiliation:
SPbETU ”LETI”, Prof. Popov st. 5, 197376 St. Petersburg, Russia
Victor V. Luchinin
Affiliation:
SPbETU ”LETI”, Prof. Popov st. 5, 197376 St. Petersburg, Russia
Sergey A. Reshanov
Affiliation:
Ascatron AB, Electrum 236, 16440 Kista, Sweden
Adolf Schöner
Affiliation:
Acreo Swedish ICT AB, Electrum 236, 16440 Kista, Sweden Ascatron AB, Electrum 236, 16440 Kista, Sweden
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Abstract

An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs).

Keywords

electrical propertiessemiconductingdevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd02-04
Copyright
Copyright © Materials Research Society 2014 

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References

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