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AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

Published online by Cambridge University Press:  01 February 2011

Ming-Hua Lo ,
Zhen-Yu Li ,
Shih-Wei Chen ,
Jhih-Cang Hong ,
Ting-Chang Lu ,
Hao-Chung Kuo  and
Shing-Chung Wang
Ming-Hua Lo
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan, +886-035-712121-56327
Zhen-Yu Li
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Shih-Wei Chen
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Jhih-Cang Hong
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Ting-Chang Lu
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Hao-Chung Kuo
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Shing-Chung Wang
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
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Abstract

In this work, we report on the growth of ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). The root-mean-square value of the surface morphology was only 0.35 nm observed from the atomic force microscope image and no crack was found on the surface. Both of the high resolution X-ray diffraction curves and transmission electron microscope images showed sharp interfaces between SLs layers and QWs with good periodicity. These results demonstrate that the ALD could be a very useful technique for controlling the crystalline quality and thickness of the III-nitride epilayer.

Keywords

atomic layer depositioncrystal growthtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C05-07
Copyright
Copyright © Materials Research Society 2008

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References

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