Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:44:07.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Absence of enhanced stability in deuterated amorphous silicon thin film transistors

Published online by Cambridge University Press:  21 March 2011

Shufan Lin ,
Andrew J. Flewitt ,
William I. Milne ,
Ralf B. Wehrspohn  and
Martin J. Powell
Shufan Lin
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, United Kingdom.
Andrew J. Flewitt
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, United Kingdom.
William I. Milne
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, United Kingdom.
Ralf B. Wehrspohn
Affiliation:
Department of Physics, University of Paderborn, 33095 Paderborn, Germany
Martin J. Powell
Affiliation:
252 Valley Drive, Kendal, Cumbria, LA9 7SL, United Kingdom.
Get access

Abstract

A comparison of the threshold voltage shift after gate-bias stress in hydrogenated and fully deuterated amorphous silicon thin film transistors (TFTs) is presented. A series of fully deuterated bottom gate TFTs consisting of a deuterated n+ contact layer, deuterated intrinsic amorphous silicon (deposited at a range of pressures) and deuterated silicon nitride gate insulator have been produced. A similar series of fully hydrogenated bottom gate TFTs have also been produced, and the stability of the two sets of devices compared. Deuterated and hydrogenated amorphous silicon deposited under the same process conditions do not have the same material properties due to the difference in the ion energy of H and D in the plasma. However, deuterated and hydrogenated material deposited at the same growth rate have almost identical structural properties. Hydrogenated and deuterated TFTs are found to exhibit the same variation in stability as a function of growth rate. In particular, there is no evidence for increased stability in deuterated TFTs. Previous reports of more stable deuterated TFTs, by other groups, can be explained by a change in the Si network properties due to the higher ion energy of deuterium in comparison with hydrogen, when using similar deposition conditions. The implication of our experimental results is that, for the same amorphous network and hydrogen/deuterium concentration, the stability is identical for hydrogenated and deuterated TFTs. Therefore, there is no giant isotopic effect in amorphous silicon TFTs. The study also further supports the idea that Si-Si bond breaking is the rate-limiting step for Si dangling bond defect creation, rather than Si-H bond breaking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A2.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Susuzi, K.. in: Kanicki, J. (Ed.), Amorphous and microcrystalline semiconductor devices: Optoelectronic Devices Artech House, Boston, 1991 Google Scholar
[2] Powell, M., IEEE Trans. Electron. Devices, 36, 2753–2763 (1989)Google Scholar
[3] Powell, M., Berkel, C. van, Franklin, A., Deane, S. and Milne, W., Phys. Rev. B, 45, 4160–4170 (1992)Google Scholar
[4] Sugiyama, S., Yang, J. and Guha, S., Appl. Phys. Lett., 70, 378–380 (1997)Google Scholar
[5] Wei, J.H., Sun, M.S. and Lee, S.C., Appl. Phys. Lett., 71, 1498–1500 (1997)Google Scholar
[6] Wei, J.H. and Lee, S.C., J. Appl. Phys., 85, 543–550 (1999)Google Scholar
[7] Shih, A., Lee, S.C. and Chia, C.T., Appl. Phys. Lett., 74, 3347–3349 (1999)Google Scholar
[8] Liu, S.D., Shih, A., Chen, S.D. and Lee, S.C., J. Vac. Sci. Technol. B, 21, 677–682 (2003)Google Scholar
[9] Avouris, P., Walkup, R.E., Rossi, A.R., Akpati, H.C., Nordlander, P., Shen, T.C., Abeln, G.C. and Lyding, J.W., Surf. Sci., 363, 368–377 (1996)Google Scholar
[10] Avouris, P., Walkup, R.E., Rossi, A.R., Shen, T.C., Abeln, G.C., Tucker, J.R. and Lyding, J.W., Chem. Phys. Lett., 257, 148–154 (1996)Google Scholar
[11] Lyding, J.W., Hess, K. and Kizilyalli, I.C., Appl. Phys. Lett., 68, 2526–2528 (1996)Google Scholar
[12] Powell, M., Wehrspohn, R. and Deane, S., J. Non-Cryst. Solids, 299–302, 556–560 (2002)Google Scholar
[13] Powell, M., Deane, SC. and Wehrspohn, R., Phys. Rev. B, 66, 155212–1 (2002)Google Scholar
[14] Branz, H., Phys. Rev. B, 59, 5498–5512 (1999)Google Scholar
[15] French, I., Deane, S., Murley, D., , Hewett, Gale, J.I. and Powell, M., Mater. Res. Soc. Symp. Proc., 467, 875–880 (1997)Google Scholar
[16] Wehrspohn, R.B., Deane, S.C., French, I.D. and Powell, M.J., Thin Solid Films, 383, 117–121 (2001)Google Scholar
[17] Lin, S., Flewitt, A.J., Milne, W.I., Wehrspohn, R.B. and Powell, M.J., to be published, (2004)Google Scholar
[18] Murley, D., French, I., Deane, S. and Gibson, R., J. Non-Cryst. Solids, 198–200, 1058–1062 (1996)Google Scholar
[19] Stutzmann, M., Jackson, W. and Tsai, C., Phys. Rev. B, 32, 23–47 (1985)Google Scholar
[20] Wehrspohn, R., Deane, S., French, I., Gale, I., Hewett, J., Powell, M. and Robertson, J., J. Appl. Phys., 87, 144–154 (2000)Google Scholar