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Ab-initio study on the γ-Al2O3 surfaces and interfaces.

Published online by Cambridge University Press:  01 February 2011

Henry P. Pinto  and
Simon D. Elliott
Henry P. Pinto
Affiliation:
NMRC, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
Simon D. Elliott
Affiliation:
NMRC, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
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Abstract

The controlled growth of alumina films by atomic layer deposition (ALD) is of great interest to the electronics industry, as high-k dielectrics are being sought for the next-generation of MOSFETS. We present a theoretical study of the alumina polymorph γ-Al2O3 based on density functional theory (DFT). The predicted bulk structure for γ-Al2O3 has the Al vacancy sites widely separated, which is in agreement with other theoretical predictions. We estimated the energy of several γ-Al2O3 surfaces namely: (111), (110) and (110). The atomic and electronic structure of the most stable (111) surface is discussed and compared with α-Al2O3 (0001). The adsorption and dissociation of the H2O onto the (111) surface is considered and H-diffusion is simulated. Finally, a model for the γ-Al2O3 (111)/aluminium-hydroxide interface is proposed and considered as an intermediate stage in the γ-alumina film growth mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E5.2
Copyright
Copyright © Materials Research Society 2004

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