Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:05:36.778Z Has data issue: false hasContentIssue false
  • English
  • Français

4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

Published online by Cambridge University Press:  10 June 2014

B. Bérenguier ,
L. Ottaviani ,
S. Biondo ,
O. Palais ,
M. Lazar ,
F. Milesi ,
F. Torregrosa ,
E. Kalinina ,
A. Lebedev  and
W. Vervisch
...Show all authors
B. Bérenguier*
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
L. Ottaviani*
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
S. Biondo
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
O. Palais
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
M. Lazar
Affiliation:
AMPERE (UMR 5005) – INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne, France
F. Milesi
Affiliation:
CEA LETI/MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
F. Torregrosa
Affiliation:
Ion Beam Services, Rue Gaston Imbert Prolongée, 13790 Peynier, France
E. Kalinina
Affiliation:
Laboratory of Physics of Semiconductors Devices, IOFFE Institute, 194021 St Petersburg, Russia
A. Lebedev
Affiliation:
Laboratory of Physics of Semiconductors Devices, IOFFE Institute, 194021 St Petersburg, Russia
W. Vervisch
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
A. Lyoussi
Affiliation:
CEA/DEN/CAD/DER/SPEx, 13108 St Paul les Durance Cedex
*
a[email protected],
b[email protected],
Get access

Abstract

4H-SiC p+n photodiodes based on ultrathin-junctions have been fabricated with distinct processes for the p+-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation. Spectral sensitivity measurements were performed at several temperatures from room temperature up to 340°C, with incident wavelengths ranging from 200 to 400 nm. Both responses are characterized by a stability between 200 and 270 nm, and a important increase with temperature between 270 and 380 nm. This fact has to be related to the two different kinds of optical absorption phenomena in SiC with respect to the wavelength, which are direct and indirect (phonon assisted) transitions. When decreasing the temperature, we noticed a hysteresis effect, which could be due to charge trapping by temperature activated defects. After strong proton and electron irradiations, the diodes showed a stability of the response below 270 nm, making them suitable for use in harsh environments. Simulation was performed at room temperature, with a good correlation between simulated and experimental room temperature curves.

Keywords

radiation effectsdevicesoptoelectronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd03-07
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sankin, V. i. et Chelibanov, V. p., « Silicon Carbide Ultraviolet Photodetectors and Their Application in Ecological Monitoring », physica status solidi (a) , vol.185, no 1, p. 153–158, 2001.3.0.CO;2-Z>CrossRefGoogle Scholar
Biondo, S., Ottaviani, L., Lazar, M., Planson, D., Duchaine, J., Le Borgne, V., El Khakani, M. A., Milesi, F., Vervisch, W., Palais, O., et Torregrosa, F., « 4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes », Materials Science Forum , vol. 717720, p. 1203–1206, mai 2012.CrossRefGoogle Scholar
Chen, X., Zhu, H., Cai, J., et Wua, Z., « High-performance 4H-SiC-based ultraviolet p-i-n photodetector », J. Appl. Phys., vol. 102, no 2, juill. 2007.Google Scholar
Biondo, S., Lazar, M., Ottaviani, L., Vervisch, W., Le Borgne, V., El Khakani, M. A., Duchaine, J., Milesi, F., Palais, O., et Planson, D., « 4H-silicon carbide thin junction based ultraviolet photodetectors », Thin Solid Films , vol. 522, p. 17–19, nov. 2012.CrossRefGoogle Scholar
Watanabe, N., Kimoto, T., et Suda, J., « 4H-SiC pn Photodiodes with Temperature- Independent Photoresponse up to 300 degrees C », Appl. Phys. Express , vol. 5, no 9, sept. 2012.CrossRefGoogle Scholar
Nakagomi, S., Momo, T., Takahashi, S., et Kokubun, Y., « Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction », Applied Physics Letters , vol.103, no 7, p. 072105, août 2013.CrossRefGoogle Scholar
Prasai, D., John, W., Weixelbaum, L., Krüger, O., Wagner, G., Sperfeld, P., Nowy, S., Friedrich, D., Winter, S., et Weiss, T., « Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications », Journal of Materials Research , vol. 28, no 01, p. 33–37, 2013.Google Scholar
Ottaviani, L., Biondo, S., Morata, S., Palais, O., Sauvage, T., et Torregrosa, F., « Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples », Materials Science Forum , vol. 645–648, p. 717–720, avr. 2010.CrossRefGoogle Scholar
Tada, H. Y. et Carter, J. R., Solar cell radiation handbook. 1977.Google Scholar
Chen, B., Yang, Y., Xie, X., Wang, N., Ma, Z., Song, K., et Zhang, X., « Analysis of temperaturedependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector », Chin. Sci. Bull. , vol. 57, no 34, p. 4427–4433, déc. 2012.CrossRefGoogle Scholar
Rathgeb, S., Moeglin, J.-P., Boffy, A., Pasquinelli, M., et Palais, O., « Hysteresis phenomena in reverse biased InAsSbP/InAs heterostructure », Applied Physics Letters , vol. 89, no 2, p. 022106 022106–3, juill. 2006.CrossRefGoogle Scholar
Klein, P. B., « Identification and carrier dynamics of the dominant lifetime limiting defect in n– 4H-SiC epitaxial layers », physica status solidi (a) , vol. 206, no 10, p. 2257– 2272, 2009.CrossRefGoogle Scholar
Kimoto, T., Danno, K., et Suda, J., « Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation », physica status solidi (b) , vol. 245, no 7, p. 1327–1336, 2008.CrossRefGoogle Scholar
Cobet, C., Wilmers, K., Wethkamp, T., Edwards, N. V., Esser, N., et Richter, W., « Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV », Thin Solid Films , vol. 364, no 12, p. 111–113, mars 2000.CrossRefGoogle Scholar
Zollner, S., Chen, J. G., Duda, E., Wetteroth, T., Wilson, S. R., et Hilfiker, J. N., « Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si », Journal of Applied Physics , vol. 85, no 12, p. 8353–8361, juin 1999.CrossRefGoogle Scholar