Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T15:46:05.849Z Has data issue: false hasContentIssue false

3D Thermal-Fluid and Stress Analysis for Single Chip SiC Power Sub-Modules

Published online by Cambridge University Press:  31 January 2011

Bang-Hung Tsao
Affiliation:
[email protected], University Of Dayton Research Institute, Dayton, Ohio, United States
Katie Sondergelt
Affiliation:
[email protected], University Of Dayton Research Institute, Dayton, Ohio, United States
Jacob Lawson
Affiliation:
[email protected], University of Dayton Researc Institute, Dayton, Ohio, United States
James Scofield
Affiliation:
[email protected], Air Force Research Laboratory, WPAFB, Ohio, United States
Levi Elston
Affiliation:
[email protected], Air Force Research Laboratory, WPAFB, Ohio, United States
Get access

Abstract

A three dimensional thermal-fluid and stress model of a single chip SiC power sub-module was generated using ANSYS in order to determine the maximum temperature and deformation under various conditions. The effects of heat flux, working fluid temperature and differential pressure on temperature and thermal stress contours were of particular concern. Steady state analysis with water as the working fluid, a simulated heat flux of 11.12×104 W/m2, an interface coupling film coefficient of either 30 or 200 W/m2-K between the cooling plate and fluid, and ambient film coefficients from 6 W/m2-K to 300 W/m2-K, predicts maximum device junction temperatures between 374 and 316 K, and corresponding deformations from .0351% to .0293%. Under the same boundary and loading conditions, but with air as the working fluid, the deformations reached .0405% to .0296%, with temperatures between 427 and 316 K. Transient analysis also showed junction temperatures in the predicted range and determined the time to reach steady state to be between 150 and 2500 seconds depending on the boundary conditions. Experiments were conducted in order to validate ANSYS results.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1International Energy Outlook, U.S. Dept. of Energy, Energy Information Administration, April 2004, pp7-107.e.Google Scholar
2 Chow, T.P.. Handbook of Thin Film Devices, Vol.1 Hetero-Structures for High Performance Devices, chapter, 7, “Silicon Carbide Power Devices,” Academic Press (2000).Google Scholar
3 Leslie, S. G.. Electronic Cooling Magazine, November, 12, Number 4B (2006).Google Scholar
4ANSYS 11.0.Google Scholar