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Synthesis, lattice structure, and band gap of ZnSnN2

Published online by Cambridge University Press:  17 June 2013

Paul C. Quayle ,
Keliang He ,
Jie Shan  and
Kathleen Kash
Paul C. Quayle
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
Keliang He
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
Jie Shan
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
Kathleen Kash*
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
*
Address all correspondence to Kathleen Kash at[email protected]
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Abstract

We report the synthesis of a direct gap semiconductor, ZnSnN2, by a plasma-assisted vapor–liquid–solid technique. Powder X-ray diffraction measurements of polycrystalline material yielded lattice parameters in good agreement with predicted values. Photoluminescence efficiency at room temperature was observed to be independent of excitation intensity between 103 and 108 W/cm2. The band gap was measured by photoluminescence excitation spectroscopy to be 1.7 ± 0.1 eV. The range of direct band gaps for the Zn(Si,Ge,Sn)N2 alloys is now predicted to extend from 4.5 to 1.7 eV, opening up this little-studied family of materials to a host of important applications.

Type
Research Letters
Information
MRS Communications , Volume 3 , Issue 3 , September 2013 , pp. 135 - 138
Copyright
Copyright © Materials Research Society 2013 

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References

1Khan, M.A.: AlGaN multiple quantum well based deep UV LEDs and their applications. Phys. Status Solidi A 203, 1764 (2006).Google Scholar
2Mills, M.M.: The LED illumination revolution. Forbes, 02/27/2008.Google Scholar
3Wu, J., Walukiewicz, W., Yu, K.M., Shan, W., Ager, J.W. III, Haller, E.E., Lu, H., Schaff, W.J., Metzger, W.K., and Kurtz, S.: Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system. J. Appl. Phys. 94, 6477 (2003).CrossRefGoogle Scholar
4Punya, A., Lambrecht, W.R.L., and van Schilfgaarde, M.: Quasiparticle band structure of Zn-IV-N2 compounds. Phys. Rev. B 84, 165204 (2011).Google Scholar
5Feldberg, N., Keen, B., Aldous, J.D., Scanlon, D.O., Stampe, P.A., Kennedy, R.J., Reeves, R.J., Veal, T.D., and Durbin, S.M.: ZnSnN2: a new earth-abundant element semiconductor for solar cells. Proc. of the 38th IEEE Photovoltaic Specialists Conference, Austin, TX, p. 2524 (2012).Google Scholar
6Lahourcade, L., Coronel, N.C., Delaney, K.T., Shukla, S.K., Spaldin, N.A., and Atwater, H.A.: Structural and optoelectronic characterization of RF sputtered ZnSnN2. Adv. Mater. 25, 2562 (2013).Google Scholar
7Paudel, T.R. and Lambrecht, W.R.L.: First-principles calculations of elasticity, polarization-related properties, and nonlinear optical coefficients in Zn-IV-N2 compounds. Phys. Rev. B 79, 245205 (2009).Google Scholar
8Farrell, R.M., Young, E.C., Wu, F., DenBaars, S.P., and Speck, J.S.: Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices. Semicond. Sci. Technol. 27, 024001 (2012).Google Scholar
9Halliburton, L.E., Edwards, G.J., Scripsic, M.P., Rakowsky, M.H., Schunemann, P.G., and Pollak, T.M.: Electron-nuclear double resonance of the zinc vacancy in ZnGeP2. Appl. Phys. Lett. 66, 2670 (1995).Google Scholar
10Hurd, A.J., Kelley, R.L., Eggert, R.G., and Lee, M.: Energy-critical elements for sustainable development. MRS Bull. 37, 405 (2012).Google Scholar
11Myers, T.H., Millecchia, M.R., Ptak, A.J., Ziemer, K.S., and Stinespring, C.D.: Influence of active nitrogen species on high temperature limitations for (0001) GaN growth by rf plasma-assisted molecular beam epitaxy. J. Vac. Sci. Technol., B 17, 1654 (1999).Google Scholar
12Peshek, T.J., Paudel, T.R., Kash, K., and Lambrecht, W.R.L.: Vibrational modes in ZnGeN2: Raman study and theory. Phys. Rev. B 77, 235213 (2008).Google Scholar
13Blanton, E., Zhao, P., He, K., Shan, J., Zhao, H., and Kash, K.: ZnGeN2: the effects of growth conditions on morphology, ordering and optical properties, in Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids, edited by Sablon, K.A., Heier, J., Tatavarti, S.R., Fu, L., Nuesch, F.A., Brabec, C.J., Kippelen, B., Wang, Z., and Olson, D.C. (Mater. Res. Soc. Symp. Proc. 1493, Warrendale, PA, 2013).Google Scholar
14Lambrecht, W.R.: private communication (2013).Google Scholar
15Du, K., Bekele, C., Hayman, C.C., Angus, J.C., Pirouz, P., and Kash, K.: Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources. J. Cryst. Growth 310, 1057 (2008).Google Scholar
16Misaki, T., Tsuchiya, K., Sakai, D., Wakahara, A., Okada, H., and Yoshida, A.: Growth and characterization of ZnGeN2 by using remote-plasma enhanced metalorganic vapor phase epitaxy. Phys. Status Solidi C 0, 188 (2002).Google Scholar
17Davydov, V.Yu., Klochikhin, A.A., Emtsev, V.V., Kurdyukov, D.A., Ivanov, S.V., Vekshin, V.A., Bechstedt, F., Furthmuller, J., Aderhold, J., Graul, J., Mudryi, A.V., Harima, H., Hashimoto, A., Yamamoto, A., and Haller, E.E.: Band gap of hexagonal InN and InGaN alloys. Phys. Status Solidi B 234, 787 (2002).Google Scholar
18Walukiewicz, W., Ager, J.W. III, Yu, K.M., Liliental-Weber, Z., Wu, J., Li, S.X., Jones, R.E., and Denlinger, J.D.: Structure and electronic properties of InN and In-rich group III-nitride alloys. J. Phys. D: Appl. Phys. 39, R83 (2006).Google Scholar
19Osinsky, A., Fuflyigin, V., Zhu, L.D., Goulakov, A.B., Graff, J.W., and Schubert, E.F.: New concepts and preliminary results for SiC bipolar transistors: ZnSiN2 and ZnGeN2 heterojunction emitters. Proc. of the IEEE/Cornell Conference on High Performance Devices, Ithaca, NY, p. 168 (2000).Google Scholar
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