Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Nukala, Pavan
Antoja-Lleonart, Jordi
Wei, Yingfen
Yedra, Lluis
Dkhil, Brahim
and
Noheda, Beatriz
2019.
Direct Epitaxial Growth of Polar (1 – x)HfO2–(x)ZrO2 Ultrathin Films on Silicon.
ACS Applied Electronic Materials,
Vol. 1,
Issue. 12,
p.
2585.
Vermeulen, Bart F.
Ciubotaru, Florin
Popovici, Mihaela I.
Swerts, Johan
Couet, Sébastien
Radu, Iuliana P.
Stancu, Alexandru
Temst, Kristiaan
Groeseneken, Guido
Adelmann, Christoph
and
Martens, Koen M.
2019.
Ferroelectric Control of Magnetism in Ultrathin HfO2\Co\Pt Layers.
ACS Applied Materials & Interfaces,
Vol. 11,
Issue. 37,
p.
34385.
Wang, Dao
Wang, Jiali
Li, Qiang
He, Waner
Guo, Min
Zhang, Aihua
Fan, Zhen
Chen, Deyang
Qin, Minghui
Zeng, Min
Gao, Xingsen
Zhou, Guofu
Lu, Xubing
and
Liu, Junming
2019.
Stable ferroelectric properties of Hf0.5Zr0.5O2 thin films within a broad working temperature range.
Japanese Journal of Applied Physics,
Vol. 58,
Issue. 9,
p.
090910.
Vulpe, Silviu
Nastase, Florin
Dragoman, Mircea
Dinescu, Adrian
Romanitan, Cosmin
Iftimie, Sorina
Moldovan, Antoniu
and
Apostol, Nicoleta
2019.
Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si.
Applied Surface Science,
Vol. 483,
Issue. ,
p.
324.
Bouaziz, Jordan
Rojo Romeo, Pedro
Baboux, Nicolas
Negrea, Raluca
Pintilie, Lucian
and
Vilquin, Bertrand
2019.
Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers.
APL Materials,
Vol. 7,
Issue. 8,
Lisiansky, Michael
Popov, Inna
Uvarov, Vladimir
Korchnoy, Valentina
Meyler, Boris
Yofis, Svetlana
and
Shneider, Yacov
2019.
High-voltage metal-insulator-metal capacitor based on crystalline HfAlOx film grown by atomic layer deposition.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
Vol. 37,
Issue. 1,
Aldrigo, M.
Dragoman, M.
Iordanescu, S.
Nastase, F.
Vulpe, S.
Dinescu, A.
and
Vasilache, D.
2019.
Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon.
IEEE Access,
Vol. 7,
Issue. ,
p.
136686.
Coll, Mariona
and
Napari, Mari
2019.
Atomic layer deposition of functional multicomponent oxides.
APL Materials,
Vol. 7,
Issue. 11,
Xiao, Wenwu
Liu, Chen
Peng, Yue
Zheng, Shuaizhi
Feng, Qian
Zhang, Chunfu
Zhang, Jincheng
Hao, Yue
Liao, Min
and
Zhou, Yichun
2019.
Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications.
ACS Applied Electronic Materials,
Vol. 1,
Issue. 6,
p.
919.
Zacharaki, C.
Tsipas, P.
Chaitoglou, S.
Fragkos, S.
Axiotis, M.
Lagoyiannis, A.
Negrea, R.
Pintilie, L.
and
Dimoulas, A.
2019.
Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition.
Applied Physics Letters,
Vol. 114,
Issue. 11,
Francois, T.
Pellissier, C.
Slesazeck, S.
Havel, V.
Richter, C.
Makosiej, A.
Giraud, B.
Breyer, E. T.
Materano, M.
Chiquet, P.
Bocquet, M.
Grenouillet, L.
Nowak, E.
Schroeder, U.
Gaillard, F.
Coignus, J.
Blaise, P.
Carabasse, C.
Vaxelaire, N.
Magis, T.
Aussenac, F.
and
Loup, V.
2019.
Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications.
p.
15.7.1.
Lyu, Jike
Fina, Ignasi
Fontcuberta, Josep
and
Sánchez, Florencio
2019.
Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance.
ACS Applied Materials & Interfaces,
Vol. 11,
Issue. 6,
p.
6224.
Bouaziz, Jordan
Romeo, Pedro Rojo
Baboux, Nicolas
and
Vilquin, Bertrand
2019.
Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films.
ACS Applied Electronic Materials,
Vol. 1,
Issue. 9,
p.
1740.
Kornblum, Lior
2019.
Conductive Oxide Interfaces for Field Effect Devices.
Advanced Materials Interfaces,
Vol. 6,
Issue. 15,
Cao, Rongrong
Liu, Qi
Liu, Ming
Song, Bing
Shang, Dashan
Yang, Yang
Luo, Qing
Wu, Shuyu
Li, Yue
Wang, Yan
and
Lv, Hangbing
2019.
Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode.
IEEE Electron Device Letters,
Vol. 40,
Issue. 11,
p.
1744.
Park, Min Hyuk
and
Hwang, Cheol Seong
2019.
Fluorite-structure antiferroelectrics.
Reports on Progress in Physics,
Vol. 82,
Issue. 12,
p.
124502.
Liu, Huan
Wang, Chengxu
Han, Genquan
Li, Jing
Peng, Yue
Liu, Yan
Wang, Xingsheng
Zhong, Ni
Duan, Chungang
Wang, Xinran
Xu, Nuo
Liu, Tsu-Jae King
and
Hao, Yue
2019.
ZrO2 Ferroelectric FET for Non-volatile Memory Application.
IEEE Electron Device Letters,
Vol. 40,
Issue. 9,
p.
1419.
Lyu, J.
Fina, I.
Bachelet, R.
Saint-Girons, G.
Estandía, S.
Gázquez, J.
Fontcuberta, J.
and
Sánchez, F.
2019.
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates.
Applied Physics Letters,
Vol. 114,
Issue. 22,
Estandía, Saúl
Dix, Nico
Gazquez, Jaume
Fina, Ignasi
Lyu, Jike
Chisholm, Matthew F.
Fontcuberta, Josep
and
Sánchez, Florencio
2019.
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress.
ACS Applied Electronic Materials,
Vol. 1,
Issue. 8,
p.
1449.
Lyu, Jike
Fina, Ignasi
Solanas, Raul
Fontcuberta, Josep
and
Sánchez, Florencio
2019.
Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films.
ACS Applied Electronic Materials,
Vol. 1,
Issue. 2,
p.
220.