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A novel approach to study the conductivity behavior of CaCu3Ti4O12 using scanning probe microscopy technique

Published online by Cambridge University Press:  13 August 2018

M.S. Ivanov Open the ORCID record for M.S. Ivanov [Opens in a new window] ,
F. Amaral ,
V.A. Khomchenko ,
L.C. Costa  and
J.A. Paixão
M.S. Ivanov*
Affiliation:
Department of Physics, CFisUC, University of Coimbra, P-3004-516 Coimbra, Portugal
F. Amaral
Affiliation:
College of Health Technology of Coimbra, Polytechnic Institute of Coimbra, P-3040-162 Coimbra, Portugal I3N and Physics Department, University of Aveiro, P-3810-193 Aveiro, Portugal
V.A. Khomchenko
Affiliation:
Department of Physics, CFisUC, University of Coimbra, P-3004-516 Coimbra, Portugal
L.C. Costa
Affiliation:
I3N and Physics Department, University of Aveiro, P-3810-193 Aveiro, Portugal
J.A. Paixão
Affiliation:
Department of Physics, CFisUC, University of Coimbra, P-3004-516 Coimbra, Portugal
*
Address all correspondence to M.S. Ivanov at [email protected]
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Abstract

Herein, we show that scanning probe microscopy (SPM) is an effective tool permitting to disclose the nature of the colossal dielectric permittivity characteristic of CaCu3Ti4O12 (CCTO) compound. SPM data confirm the existence of micro- and nanoscale barrier layer capacitance mechanisms which simultaneously contribute to the electrical conductivity of the material. The former mechanism is associated with the potential grain-to-grain barriers. The latter mechanism involves the barriers created by intragrain structural defects. The results of the SPM study shed new light on the origin of the colossal dielectric constant in CCTO.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 932 - 937
Copyright
Copyright © Materials Research Society 2018 

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