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Lithography-free variation of the number density of self-catalyzed GaAs nanowires and its impact on polytypism

Published online by Cambridge University Press:  01 August 2018

Philipp Schroth Open the ORCID record for Philipp Schroth [Opens in a new window] ,
Julian Jakob ,
Ludwig Feigl ,
Seyed Mohammad Mostafavi Kashani ,
Ullrich Pietsch  and
Tilo Baumbach
Philipp Schroth*
Affiliation:
University of Siegen, Solid State Physics, Emmy-Noether Campus, Walter-Flex Straße 3, D-57068 Siegen, Germany Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße, 12, D-76131 Karlsruhe, Germany Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
Julian Jakob
Affiliation:
Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße, 12, D-76131 Karlsruhe, Germany Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
Ludwig Feigl
Affiliation:
Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
Seyed Mohammad Mostafavi Kashani
Affiliation:
University of Siegen, Solid State Physics, Emmy-Noether Campus, Walter-Flex Straße 3, D-57068 Siegen, Germany
Ullrich Pietsch
Affiliation:
University of Siegen, Solid State Physics, Emmy-Noether Campus, Walter-Flex Straße 3, D-57068 Siegen, Germany
Tilo Baumbach
Affiliation:
Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße, 12, D-76131 Karlsruhe, Germany Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
*
Address all correspondence to Philipp Schroth at [email protected]
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Abstract

We investigate the impact of increasing number density of self-catalyzed GaAs nanowires (NWs) on their crystal structure, grown by molecular beam epitaxy. To this end, we employ an iterative, lithography-free approach for varying the number density of self-catalyzed GaAs NWs grown on Si(111) covered with native oxide. We use scanning electron microscopy and x-ray diffraction in combination with simulations based on the extended Markov model for the morphologic characterization of the so obtained NWs. Our findings show how both the shape of the Ga-droplet and the NW crystal structure are affected even by relatively small changes of the wire number density, allowing for a quantification of its influence on the local NW growth conditions at nominally identical growth parameters.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 871 - 877
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Copyright
Copyright © Materials Research Society 2018 

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