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Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature – ERRATUM

Published online by Cambridge University Press:  15 May 2015

Abstract

Type
Erratum
Copyright
Copyright © Materials Research Society 2015 

In Mei et al.Reference Mei, Zhang, Vardeny and Jurchescu1, the authors were initially published in the incorrect order:

Y. Mei† and O.D. Jurchescu, Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109

C. Zhang† and Z.V. Vardeny, Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112

Correct order is, as listed:

Y. Mei†, Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109

C. Zhang†, Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112

Z.V. Vardeny, Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112

O.D. Jurchescu, Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109

The publisher regrets the mistakes. The original article has been updated with the correct order of authors.

References

1.Mei, Y., Zhang, C., Vardeny, Z.V., and Jurchescu, O.D.: Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature. MRS Communications (2015). doi: 10.1557/mrc.2015.21.Google Scholar