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Effect of intermittent oxygen exposure on chemical vapor deposition of graphene

Published online by Cambridge University Press:  09 October 2017

Selcuk Temiz ,
Zafer Mutlu ,
Sina Shahrezaei ,
Mihrimah Ozkan  and
Cengiz S. Ozkan
Selcuk Temiz
Affiliation:
Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA
Zafer Mutlu
Affiliation:
Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA
Sina Shahrezaei
Affiliation:
Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA
Mihrimah Ozkan
Affiliation:
Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, USA
Cengiz S. Ozkan*
Affiliation:
Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA Department of Mechanical Engineering, University of California, Riverside, CA 92521, USA
*
Address all correspondence to Cengiz S. Ozkan at [email protected]
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Abstract

Chemical vapor deposition is the most proficient method for growing graphene on copper foils due to its scalability, repeatability, and uniformity, etc. Herein, we systematically study the effect of oxygen (O2) exposure on graphene growth. We introduced O2 before and during the growth, and then studied its effects on the morphology, crystallinity, and nucleation density of graphene. We observe that introducing O2 during growth significantly improves the graphene crystallinity while pre-dosing O2 before growth reduces the graphene nucleation density. These studies suggest that intermittent O2 exposure play a significant role in graphene growth, enabling scalable production of high-quality graphene.

Type
Research Letters
Information
MRS Communications , Volume 7 , Issue 4 , December 2017 , pp. 826 - 831
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Copyright
Copyright © Materials Research Society 2017 

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