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Use of surface photo-reactive nanometal printing for polymer thin-film transistors: contact resistance and short-channel effects

Published online by Cambridge University Press:  16 September 2019

Gyo Kitahara*
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo113-8656, Japan
Mitsuhiro Ikawa
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo113-8656, Japan
Satoshi Matsuoka
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo113-8656, Japan
Shunto Arai
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo113-8656, Japan
Tatsuo Hasegawa
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo113-8656, Japan
*
Address all correspondence to Gyo Kitahara at [email protected]
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Abstract

A crucial target in the printed electronics technologies is to realize all-printed thin-film transistors (TFTs), as being applicable to the industry. Here, the authors report printed polymer TFTs through the integration of the SuPR-NaP technique, a promising way for manufacturing ultrafine printed silver electrodes, with printed polymer semiconductor layers. The authors used a class of donor–acceptor-type copolymer, PDVT-10, and found that the devices exhibit excellent TFT characteristics. The devices allow the transfer length method measurements with high accuracy, where the estimated contact resistance is considerably small (4.7 kΩ cm) among the bottom-contact TFTs using printed silver electrodes, with also showing short-channel effects.

Type
Research Letters
Copyright
Copyright © Materials Research Society 2019

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