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Understanding the relationship between Cu2ZnSn(S,Se)4 material properties and device performance

Published online by Cambridge University Press:  28 November 2014

Talia Gershon ,
Tayfun Gokmen ,
Oki Gunawan ,
Richard Haight ,
Supratik Guha  and
Byungha Shin
Talia Gershon*
Affiliation:
IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598
Tayfun Gokmen
Affiliation:
IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598
Oki Gunawan
Affiliation:
IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598
Richard Haight
Affiliation:
IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598
Supratik Guha
Affiliation:
IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598
Byungha Shin
Affiliation:
KAIST Department of Materials Science, Munji-ro 14, Yuseong-gu, Daejeon, South Korea
*
Address all correspondence to Talia Gershon at [email protected]
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Abstract

Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaics (PV) have long been considered promising candidates for large-scale PV deployment due to the availability of constituent elements and steady improvements in device efficiency over time. The key limitation to high efficiency in this technology remains a deficit in the open-circuit voltage with respect to the band gap. The past decade has seen significant progress toward understanding how the various material properties such as bulk and surface composition, point defects (intrinsic and extrinsic), and grain boundaries all impact the optoelectronic properties of CZTSSe materials, and consequently device performance. This paper aims to summarize what is known about the CZTSSe bulk and surfaces, and how these material properties may be related to the Voc deficit.

Type
Prospective Articles
Information
MRS Communications , Volume 4 , Issue 4 , December 2014 , pp. 159 - 170
Copyright
Copyright © Materials Research Society 2014 

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