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Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics

Published online by Cambridge University Press:  25 August 2011

C.D. Cress ,
J.J. McMorrow ,
J.T. Robinson ,
A.L. Friedman ,
H.L. Hughes ,
B.D. Weaver  and
B.J. Landi
C.D. Cress*
Affiliation:
Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA
J.J. McMorrow
Affiliation:
Global Strategies Group (North America) Inc., Crofton, Maryland 21114, USA
J.T. Robinson
Affiliation:
Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA
A.L. Friedman
Affiliation:
Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA
H.L. Hughes
Affiliation:
Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA
B.D. Weaver
Affiliation:
Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA
B.J. Landi
Affiliation:
Department of Chemical and Biomedical Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA
*
Address all correspondence to C.D. Cress at[email protected]
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Abstract

We investigate the radiation response of single-walled carbon nanotube (SWCNT) thin-film transistors fabricated with 23 nm silicon oxynitride gate dielectric layers, for total ionizing doses (TIDs) of Co-60 gamma irradiation up to 2 Mrad(Si). Irradiations with ±1 MV/cm across the gate dielectric have little effect on the threshold voltage, yielding shifts of less than ±0.25 V and no detrimental effect on SWCNT mobility or maximum drain current. This illustrates the need to consider the total device material composition when investigating the radiation response of carbon nanoelectronics and substantiates the applicability of SWCNT-based nanoelectronics for use in high TID environments.

Type
Rapid Communications
Information
MRS Communications , Volume 1 , Issue 1 , November 2011 , pp. 27 - 31
Copyright
Copyright © Materials Research Society 2011

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