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On the identification of Sb2Se3 using Raman scattering

Published online by Cambridge University Press:  11 May 2018

A. Shongalova ,
M.R. Correia ,
B. Vermang ,
J.M.V. Cunha ,
P.M.P. Salomé  and
P.A. Fernandes
A. Shongalova
Affiliation:
Departamento de Física and I3N, Universidade de Aveiro, 3810-193 Aveiro, Portugal Satpayev University, Satpayev street, 22a, 050013 Almaty City, Kazakhstan
M.R. Correia
Affiliation:
Departamento de Física and I3N, Universidade de Aveiro, 3810-193 Aveiro, Portugal
B. Vermang
Affiliation:
University of Hasselt – Partner in Solliance, Agoralaan gebouw H, Diepenbeek 3590, Belgium Imec – Partner in Solliance, Kapeldreef 75, Leuven 3001, Belgium Imomec – Partner in Solliance, Wetenschapspark 1, Diepenbeek 3590, Belgium
J.M.V. Cunha
Affiliation:
International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
P.M.P. Salomé
Affiliation:
International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
P.A. Fernandes*
Affiliation:
Departamento de Física and I3N, Universidade de Aveiro, 3810-193 Aveiro, Portugal International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal Departamento de Física, CIETI, Instituto Superior de Engenharia do Porto, Instituto Politécnico do Porto, Rua Dr. António Bernardino de Almeida, 431, 4200-072 Porto, Portugal
*
Address all correspondence to P.A. Fernandes at [email protected]
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Abstract

Robust evidences are presented showing that the Raman mode around 250 cm−1 in the Sb2Se3 thin films does not belong to this binary compound. The laser power density dependence of the Raman spectrum revealed the formation of Sb2O3 for high values of laser intensity power density excitation under normal atmospheric conditions. To complement this study, the Sb2Se3 films were characterized by x-ray diffraction during in situ annealing. Both these measurements showed that the Sb2Se3 compound can be replaced by Sb2O3. A heat-assisted chemical process explains these findings. Furthermore, Raman conditions required to perform precise measurements are described.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 865 - 870
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Copyright
Copyright © Materials Research Society 2018 

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