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Fabrication of nickel and nickel carbide thin films by pulsed chemical vapor deposition

Published online by Cambridge University Press:  26 February 2018

Qun Guo ,
Zheng Guo ,
Jianmin Shi ,
Lijun Sang ,
Bo Gao ,
Qiang Chen ,
Zhongwei Liu  and
Xinwei Wang Open the ORCID record for Xinwei Wang [Opens in a new window]
Qun Guo
Affiliation:
Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
Zheng Guo
Affiliation:
School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, China
Jianmin Shi
Affiliation:
Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621000, China
Lijun Sang
Affiliation:
Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
Bo Gao
Affiliation:
Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
Qiang Chen
Affiliation:
Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
Zhongwei Liu*
Affiliation:
Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
Xinwei Wang*
Affiliation:
School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, China
*
Address all correspondence to Zhongwei Liu and Xinwei Wang at [email protected]; [email protected]
Address all correspondence to Zhongwei Liu and Xinwei Wang at [email protected]; [email protected]
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Abstract

We report a new pulsed chemical vapor deposition (PCVD) process to deposit nickel (Ni) and nickel carbide (Ni3C x ) thin films, using bis(1,4-di-tert-butyl-1,3-diazabutadienyl)nickel(II) precursor and either H2 gas or H2 plasma as the coreactant, at a temperature from 140 to 250 °C. All the PCVD films are fairly pure with low levels of N and O impurities. The films deposited with H2 gas at ≤200 °C are faced centered cubic-phase Ni metal films with low C content; but at ≥220 °C, another phase of rhombohedral Ni3C is formed and the C content increases. However, when H2 plasma is used, the films are always in rhombohedral Ni3C phase for the entire temperature range.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 1 , March 2018 , pp. 88 - 94
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Copyright
Copyright © Materials Research Society 2018 

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Footnotes

*

Q.G. and Z.G. contributed equally to this work.

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