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Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond

Published online by Cambridge University Press:  12 February 2019

Yan-Feng Wang ,
Wei Wang ,
Xiaohui Chang ,
Juan Wang ,
Jiao Fu ,
Tianfei Zhu ,
Zongchen Liu ,
Yan Liang ,
Dan Zhao  and
Zhangcheng Liu
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Yan-Feng Wang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Wei Wang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Xiaohui Chang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Juan Wang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Jiao Fu
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Tianfei Zhu
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Zongchen Liu
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Yan Liang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Dan Zhao
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Zhangcheng Liu
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Minghui Zhang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Kaiyue Wang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, Shanxi Province, China
Hong-Xing Wang*
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
Ruozheng Wang
Affiliation:
Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, Shaanxi Province, China
*
Address all correspondence to Hong-Xing Wang at [email protected]
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Abstract

Direct determination of barrier height (ΦBH) value between Ir and single crystal (001) hydrogen-terminated diamond with lightly boron doped has been performed using x-ray photoelectron spectroscopy technique. 70 nm Ir islands were formed on hydrogen-terminated diamond surface using anodic aluminum oxide. The ΦBH value for Ir/hydrogen-terminated diamond was −0.43 ± 0.14 eV, indicating that Ir was a suitable metal for ohmic contact with hydrogen-terminated diamond. The band diagram of Ir/hydrogen-terminated diamond was obtained. The experimental ΦBH was compared with the theoretical ΦBH in this work.

Type
Research Letters
Information
MRS Communications , Volume 9 , Issue 1 , March 2019 , pp. 165 - 169
Copyright
Copyright © Materials Research Society 2019 

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