Contact materials for nanoelectronics. This issue of MRS Bulletin reviews current development of contact materials for electronic and nanoelectronic devices. On the cover is a top-down view of transistors and associated electrical contacts to the transistor gate electrodes and junction silicides. The transistor channel length is nearly 90 nm. Transistor scaling to the nanoscale and adoption of new contact and channel materials has created many challenges and opportunities for materials scientists. Image courtesy of Texas Instruments, Inc. See the technical theme that begins on p. 90.
Contents
Front Cover (OFC, IFC) and matter
Other
MRS volume 36 issue 2 Cover and Front matter
-
- Published online by Cambridge University Press:
- 18 February 2011, pp. f1-f6
-
- Article
-
- You have access
- Export citation
Back Cover (OBC, IBC) and matter
Other
MRS volume 36 issue 2 Cover and Back matter
-
- Published online by Cambridge University Press:
- 18 February 2011, pp. b1-b2
-
- Article
-
- You have access
- Export citation