Power electronics with wide bandgap materials. Wide bandgap semiconductors such as GaN and SiC represent nextgeneration materials for power electronics replacing Si. They show promising advantages over Si-based conventional electronics. This issue overviews research revolving around GaN and SiC power electronics, from the choice of substrate, film growth process, devices, and circuits to examples of applications. The cover shows Au-free GaN power devices processed on 200-mm-diameter Si wafers in a standard Si CMOS process line. Courtesy of GaN Imec Industrial Affiliation Program, Leuven, Belgium. See the technical theme that begins on page 390.
Features
Posterminaries
Other
Zapping stones: How magnetic lodestones are born
-
- Published online by Cambridge University Press:
- 08 May 2015, pp. 455-456
-
- Article
-
- You have access
- HTML
- Export citation
Career Central
Other
CAREER CENTRAL
-
- Published online by Cambridge University Press:
- 08 May 2015, p. 454
-
- Article
-
- You have access
- Export citation
Erratum
Correction
Erratum
-
- Published online by Cambridge University Press:
- 08 May 2015, p. 384
-
- Article
-
- You have access
- HTML
- Export citation
Front Cover (OFC, IFC) and matter
MRS volume 40 issue 5 Cover and Front matter
-
- Published online by Cambridge University Press:
- 08 May 2015, pp. f1-f6
-
- Article
-
- You have access
- Export citation
Back Cover (OBC, IBC) and matter
MRS volume 40 issue 5 Cover and Back matter
-
- Published online by Cambridge University Press:
- 08 May 2015, pp. b1-b2
-
- Article
-
- You have access
- Export citation