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Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film

Published online by Cambridge University Press:  09 January 2017

Takumi Moriyama ,
Sohta Hida ,
Takahiro Yamasaki ,
Takahisa Ohno ,
Satoru Kishida  and
Kentaro Kinoshita
Takumi Moriyama*
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Sohta Hida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Takahiro Yamasaki
Affiliation:
National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Takahisa Ohno
Affiliation:
National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Satoru Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Kentaro Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
*
*(Email: [email protected])
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Abstract

Practical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in polycrystalline metal oxide films. Based on experimental and theoretical results of NiO based ReRAM, we have proposed a grain surface tiling model, in which grain surfaces (i.e. grain boundaries) are composed by insulating and conductive micro surface structures. This paper reports the adequacy of our model to the NiO based ReRAM and universality of surface electronic properties in metal oxides of NiO, CoO and MgO. Experimental results of RS operating modes suggest that the resistance changes in the grain boundaries, supporting our model. First-principles calculation results suggest that our model can be adopted to other metal oxide materials and the RS from a low resistance to a high resistance can be caused at 1000 K, which agrees with previous experimental reports.

Keywords

grain boundariesmemorysimulation
Type
Articles
Information
MRS Advances , Volume 2 , Issue 4: Electronics, Magnetics and Photonics , 2017 , pp. 229 - 234
Copyright
Copyright © Materials Research Society 2017 

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References

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