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Study of the effect of the deposition RF power on the characteristics of microcrystalline Silicon-Germanium thin films produced by PECVD

Published online by Cambridge University Press:  02 January 2019

Arturo Torres ,
Mario Moreno ,
Pedro Rosales ,
Miguel Domínguez ,
Alfonso Torres ,
Adrian Itzmoyotl ,
Roberto Ambrosio  and
Javier de la Hidalga
Arturo Torres*
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Mario Moreno
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Pedro Rosales
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Miguel Domínguez
Affiliation:
Meritorious Autonomous University of Puebla, BUAP, Puebla, México
Alfonso Torres
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Adrian Itzmoyotl
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Roberto Ambrosio
Affiliation:
Meritorious Autonomous University of Puebla, BUAP, Puebla, México
Javier de la Hidalga
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
*
*(Email: [email protected])
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Abstract

Hydrogenated microcrystalline Silicon-Germanium (μc-SiGe:H) thin films were deposited using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique from a gas mixture of SiH4, GeH4, H2 and Ar at a substrate temperature of 200 ° C. The films were deposited at a pressure of 1.5 Torr, while the RF power was varied in the range of 20 W to 35 W. Structural, optical and electrical characterization was performed in the films, Fourier Transform Infrared Spectroscopy (FTIR) was performed in order to analyze the hydrogen bonding of silicon and germanium, while Raman spectroscopy was used in order to analyze the crystallinity of the films. Through the optical and electrical characterization of the films, parameters such as the optical band gap (Eg) and the activation energy (EA) were obtained, respectively. The conductivity of the films changed up two to orders of magnitude from dark conditions to illumination AM 1.5. Finally, the correlation between deposition RF power and the film properties is presented.

Keywords

Raman spectroscopyplasma-enhanced CVD (PECVD) (deposition)infrared (IR) spectroscopySiGe
Type
Articles
Information
MRS Advances , Volume 3 , Issue 64: International Materials Research Congress XXVII , 2018 , pp. 3939 - 3947
Copyright
Copyright © Materials Research Society 2018 

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References

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