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Void Nucleation on a Contaminated Patch

Published online by Cambridge University Press:  31 January 2011

B. M. Clemens ,
W. D. Nix  and
R. J. Gleixner
B. M. Clemens
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 95305–2205
W. D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 95305–2205
R. J. Gleixner
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 95305–2205
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Abstract

The energetics of a simple model of void nucleation on a contaminated patch between the sidewall and metal in an integrated circuit interconnect are examined to determine void nucleation behavior. The conditions under which there is no void nucleation barrier are represented by a simple relationship between the volume driving force, the equilibrium contact angle, the surface energy of the metal, and the contaminated patch radius. The void nucleation barrier, when it exists, is a strong function of these same parameters, and increases sharply as the driving force decreases, and under some conditions, increases with increasing equilibrium contact angle.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 8 , August 1997 , pp. 2038 - 2042
Copyright
Copyright © Materials Research Society 1997

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