Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Joo, Young-Chang
Baker, S.P.
and
Arzt, E.
1998.
Electromigration in single-crystal aluminum lines with fast diffusion paths made by nanoindentation.
Acta Materialia,
Vol. 46,
Issue. 6,
p.
1969.
Joo, Y.-C.
Thompson, C. V.
Baker, S. P.
and
Arzt, E.
1999.
Electromigration proximity effects of two neighboring fast-diffusion segments in single-crystal aluminum lines.
Journal of Applied Physics,
Vol. 85,
Issue. 4,
p.
2108.
Gungor, M. Rauf
and
Maroudas, Dimitrios
1999.
Theoretical analysis of electromigration-induced failure of metallic thin films due to transgranular void propagation.
Journal of Applied Physics,
Vol. 85,
Issue. 4,
p.
2233.
Gleixner, R. J.
and
Nix, W. D.
1999.
A physically based model of electromigration and stress-induced void formation in microelectronic interconnects.
Journal of Applied Physics,
Vol. 86,
Issue. 4,
p.
1932.
Doan, J. C.
Lee, S.-H.
Bravman, J. C.
Flinn, P. A.
and
Marieb, T. N.
1999.
Void nucleation on intentionally added defects in Al interconnects.
Applied Physics Letters,
Vol. 75,
Issue. 5,
p.
633.
Kalnas, C. E.
Keller, R. R.
Phelps, J. M.
and
Marieb, T. N.
1999.
Effect of Modified Metal/Passivation Interfaces on Stress Voiding in Interconnects+.
MRS Proceedings,
Vol. 563,
Issue. ,
Srikar, V.T
and
Thompson, C.V
1999.
Dislocation pile-ups as sites for formation of electromigration-induced transgranular slit-like voids in Al interconnects.
Scripta Materialia,
Vol. 42,
Issue. 1,
p.
97.
Doan, J. C.
Lee, S.
Lee, S.-H.
Flinn, P. A.
Bravman, J. C.
and
Marieb, T. N.
2001.
Effects of dielectric materials on electromigration failure.
Journal of Applied Physics,
Vol. 89,
Issue. 12,
p.
7797.
Lee, Seok-Hee
Bravman, John C.
Doan, Jonathan C.
Lee, Samantha
Flinn, Paul A.
and
Marieb, Thomas N.
2002.
Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride.
Journal of Applied Physics,
Vol. 91,
Issue. 6,
p.
3653.
Paik, Jong-Min
Park, Hyun
and
Joo, Young-Chang
2004.
Effect of low-k dielectric on stress and stress-induced damage in Cu interconnects.
Microelectronic Engineering,
Vol. 71,
Issue. 3-4,
p.
348.
Aoyagi, Minoru
2004.
Effect of the critical size of initial voids on stress-induced migration.
Thin Solid Films,
Vol. 467,
Issue. 1-2,
p.
146.
Aoyagi, Minoru
2006.
Change in electrical resistance caused by stress-induced migration.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Vol. 24,
Issue. 1,
p.
250.
Ceric, H.
Lacerda de Orio, R.
and
Selberherr, S.
2008.
Comprehensive modeling of electromigration induced interconnect degradation mechanisms.
p.
69.
Hall, Gavin D. R.
Allman, Derryl D. J.
and
Bhatt, Hemanshu D.
2008.
Impact of via interactions and metal slotting on stress induced voiding.
p.
392.
Filippi, R. G.
Wang, P.-C.
Brendler, A.
and
Lloyd, J. R.
2009.
Correlation between a threshold failure time and void nucleation for describing the bimodal electromigration behavior of copper interconnects.
Applied Physics Letters,
Vol. 95,
Issue. 7,
Orio, Roberto Lacerda de
Ceric, Hajdin
Cervenka, Johann
and
Selberherr, Siegfried
2009.
Electromigration failure development in modern dual-damascene interconnects.
p.
23.
Ceric, H.
de Orio, R.L.
Cervenka, J.
and
Selberherr, S.
2009.
A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects.
IEEE Transactions on Device and Materials Reliability,
Vol. 9,
Issue. 1,
p.
9.
de Orio, R.L.
Ceric, H.
and
Selberherr, S.
2010.
Physically based models of electromigration: From Black’s equation to modern TCAD models.
Microelectronics Reliability,
Vol. 50,
Issue. 6,
p.
775.
Filippi, R. G.
Wang, P.-C.
Brendler, A.
Chanda, K.
and
Lloyd, J. R.
2010.
Implications of a threshold failure time and void nucleation on electromigration of copper interconnects.
Journal of Applied Physics,
Vol. 107,
Issue. 10,
Arnaud, L.
Cacho, F.
Doyen, L.
Terrier, F.
Galpin, D.
and
Monget, C.
2010.
Analysis of electromigration induced early failures in Cu interconnects for 45nm node.
Microelectronic Engineering,
Vol. 87,
Issue. 3,
p.
355.