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Synthesis of α–SiO2 nanowires using Au nanoparticle catalysts on a silicon substrate

Published online by Cambridge University Press:  26 November 2012

Z. Q. Liu
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
S. S. Xie*
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
L. F. Sun
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
D. S. Tang
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
W. Y. Zhou
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
C. Y. Wang
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
W. Liu
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
Y. B. Li
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
X. P. Zou
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
G. Wang
Affiliation:
Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Scienes, Beijing 100080, China
*
a)Address all correspondence to this author. E-mail: [email protected]
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Abstract

Large-scale SiO2 nanowires were synthesized by using a simple but an effective approach at low temperature. Scanning electron microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy were employed to characterize the samples. The results indicated that SiO2 nanowires with a uniform diameter of about 20 nm and a length up to 10 μm have been synthesized. Photoluminescence measurement showed that the SiO2 nanowires emitted blue light at 2.8 and 3.0 eV. The possible growth process of the SiO2 nanowires is discussed. Using this method, large panels of SiO2 nanowires can be made under conditions that are suitable for device fabrication.

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Articles
Copyright
Copyright © Materials Research Society 2001

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