Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-23T02:25:07.586Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of the effects of low-energy electron bombardment during the chemical vapor deposition of diamond

Published online by Cambridge University Press:  31 January 2011

J. A. Gonzaález ,
O. L. Figueroa ,
B. R. Weiner  and
G. Morell
J. A. Gonzaález
Affiliation:
Department of Physical Sciences, University of Puerto Rico, P.O. Box 23323, San Juan, Puerto Rico 00931
O. L. Figueroa
Affiliation:
Department of Physical Sciences, University of Puerto Rico, P.O. Box 23323, San Juan, Puerto Rico 00931
B. R. Weiner
Affiliation:
Department of Physical Sciences, University of Puerto Rico, P.O. Box 23323, San Juan, Puerto Rico 00931
G. Morell*
Affiliation:
Department of Physical Sciences, University of Puerto Rico, P.O. Box 23323, San Juan, Puerto Rico 00931
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

The effects of low-energy electron bombardment during the chemical vapor deposition of diamond were studied. The film growth was monitored in real time with in situ phase-modulated ellipsometry, in order to trigger the electron bombardment at different growth stages. Ex situ Raman spectroscopy and scanning electron microscopy were employed to evaluate the crystalline quality and the morphology of the grown films, respectively. The results indicated that triggering the electron bombardment after high-quality scattered diamond crystallites had formed results in finely grained smoother films of similar diamond yield and crystalline quality as those grown without bombardment. However, the electron bombardment deteriorates the film crystalline quality and the diamond yield when it was triggered from the start of deposition.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 293 - 295
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Yoder, M.N., in Synthetic Diamond: Emerging CVD Science and Technology, edited by Spear, K.E. and Dismukes, J.P. (John Wiley, New York, 1994), p. 4.Google Scholar
2.McKeag, R.D., Chan, S.S.M., and Jackman, R.B., Appl. Phys. Lett. 67, 2117 (1995).CrossRefGoogle Scholar
3.Popovici, G., Melnikov, A., Varichenko, V.V., Sung, T., Prelas, M.A., Wilson, R.G., and Loyalka, S.K., J. Appl. Phys. 81, 2429 (1997).CrossRefGoogle Scholar
4.Sawabe, A. and Inuzuka, T., Appl. Phys. Lett. 46, 146 (1985).CrossRefGoogle Scholar
5.Lee, J., Rovira, P.I., An, I., and Collins, R.W., Appl. Phys. Lett. 72, 900 (1998).CrossRefGoogle Scholar
6.Jellison, G.E. Jr., and McCamy, J.W., Appl. Phys. Lett. 61, 512 (1992).CrossRefGoogle Scholar
7.Morell, G., Canales, E., and Weiner, B.R., Diamond Relat. Mater. 8, 166 (1999).CrossRefGoogle Scholar
8.Morell, G., Quiäones, O., Diaz, Y., Vargas, I.M., Weiner, B.R., and Katiyar, R.S., Diamond Relat. Mater. 7, 1029 (1998).CrossRefGoogle Scholar
9.Nemanich, R.J., Ann. Rev. Mater. Sci. 21, 535 (1991).CrossRefGoogle Scholar