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Quantitative Analysis of Electromigration Damage in Al-based Conductor Lines

Published online by Cambridge University Press:  31 January 2011

O. Kraft ,
J. E. Sanchez Jr ,
M. Bauer  and
E. Arzt
O. Kraft
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde der Universität, 70174 Stuttgart, Germany
J. E. Sanchez Jr
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde der Universität, 70174 Stuttgart, Germany
M. Bauer
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde der Universität, 70174 Stuttgart, Germany
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde der Universität, 70174 Stuttgart, Germany
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Extract

Electromigration damage in Al-based interconnects with three compositions (pure Al, Al–1%Si–0.5%Cu, and Al–2%Cu) was studied quantitatively. Using scanning electron microscopy, the spacings between more than 1000 voids and hillocks were measured. The distribution of the spacings was found to be a function of the composition, the applied current density, and the linewidth. The measurements confirm the existence of a threshold product of current density and diffusion length. In particular, a dependence of this threshold product on the Cu content was found. The results of the analysis show that there are clear correlations between the details of the microscopic damage processes and the lifetime of the conductor lines.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 8 , August 1997 , pp. 2027 - 2037
Copyright
Copyright © Materials Research Society 1997

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