Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-23T11:40:36.205Z Has data issue: false hasContentIssue false

Microstructural studies of Cu brazing on AlN

Published online by Cambridge University Press:  26 November 2012

Chaoxian Cai
Affiliation:
Department of Electrical Engineering, University of Kentucky, Lexington, Kentucky 40506-0046
Janet K. Lumpp
Affiliation:
Department of Electrical Engineering, University of Kentucky, Lexington, Kentucky 40506-0046
Get access

Abstract

The microstructures and phase compositions of Cu–Ag–Ti active-metal brazing alloys have been studied by scanning electron microscopy and energy dispersive x-ray spectroscopy to evaluate alloy wetting on AlN and Cu brazing on AlN. Titanium is segregated from the original alloy, and a Ti-rich layer is formed between the brazing alloy and AlN substrate. The alloy components are able to penetrate into the grain boundary of AlN during wetting or brazing, and the interfacial reaction takes place along the grain and outer boundary of AlN. The bonding of brazing alloys to AlN substrate often induces cracks in the AlN side.

Type
Articles
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Doane, D.A. and Franzon, P.D., Multichip Module Technologies and Alternatives: The Basics (Van Nostrand Reinhold, New York, 1993).CrossRefGoogle Scholar
2.Marchant, D.D., Nemeck, T.E., in Advances in Ceramics: Ceramic Substrates and Packages for Electronic Applications, edited by Yan, M.F., Niwa, K., O'Brien, H.M., and Young, W.S. (AcerS, Inc., Westerville, OH, 1989), Vol. 26, p. 19.Google Scholar
3.Anderson, N.C. and Mitchell, J.T., Proceedings of the International Symposium on Hybrid Microelectronics, ISHM'94 (Boston, MA, 1994), p. 129.Google Scholar
4.Palmer, R.H., Reed, D.J., Adlam, E.J., and Maney, J.P., Proceedings of the International Symposium on Hybrid Microelectronics, ISHM'94 (Boston, MA, 1994), p. 132.Google Scholar
5.Evans, T.E., in Hybrid Microelectronics Handbook, 2nd ed., edited by Sergent, J.E. and Harper, C.A. (McGraw-Hill, New York, 1995), p. 5–1.Google Scholar
6.Nicholas, M.G. and Crispin, R.M., Ceram. Eng. Sci. Proc. 10, 1602 (1989).CrossRefGoogle Scholar
7.Nicholas, M.G., Mortimer, D.A., Jones, L.M., and Crispin, R.M., J. Mater. Sci. 25, 2679 (1990).CrossRefGoogle Scholar
8.Brow, R.K., Loehman, R.E., Tomsia, A.P. and Pask, J.A., in Advances in Ceramics: Ceramic Substrates and Packages for Electronic Applications, edited by Yan, M.F., Niwa, K., O'Brien, H.M., and Young, W.S. (AcerS, Inc., Westerville, OH, 1989), Vol. 26, p. 189.Google Scholar
9.Chung, Y.S. and Iseki, T., Eng. Fract. Mech. 40, 941 (1991).CrossRefGoogle Scholar
10.Kang, S., Dunn, E.M., Selverian, J.H., and Kim, H.J., Am. Ceram. Soc. Bull. 68, 1608 (1989).Google Scholar
11.Pask, J.A., Am. Ceram. Soc. Bull. 66, 1587 (1987).Google Scholar
12.Metals Handbook, desk ed., edited by Boyer, H.E. and Gall, T.L. (ASM, Metals Park, OH, 1985), Sec. 35, p. 53.Google Scholar
13.ASM Handbook: Alloy Phase Diagrams, edited by Baker, H. (ASM International, Materials Park, OH, 1992).Google Scholar
14.Paulasto, M. and Kivilahti, J., J. Mater. Res. 13, 343 (1998).CrossRefGoogle Scholar
15.Reed-Hill, R.E., Physical Metallurgy Principles, 2nd ed. (PWS Engineering, Boston, MA, 1973), p. 541.Google Scholar