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Mechanism of in-plane texture development by ion-beam-assisted deposition

Published online by Cambridge University Press:  31 January 2011

H. Ji  and
G. S. Was
H. Ji
Affiliation:
Physics Department, The University of Michigan, Ann Arbor, Michigan 48109
G. S. Was*
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, Michigan 48109
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The objective of this work was to determine the mechanism of in-plane texture development in films made by ion-beam-assisted deposition (IBAD). Both in-plane texture and surface roughness were studied as functions of film thickness. A phenomenological growth model based on the preferential growth of aligned grains due to channeling was proposed, linking the surface roughness evolution and texture development. Good correlation was found between the measured roughness and the model prediction, as well as between the roughness evolution and the in-plane texture development. A critical thickness was introduced at which in-plane texture is completed. Both surface roughness and texture results gave a critical film thickness of 114–250 nm for an ion energy of 1000 eV and an R ratio of 0.4. This range of critical film thickness was far beyond the nucleation stage, providing evidence that the development of in-plane texture in IBAD Nb films was growth-controlled.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2524 - 2532
Copyright
Copyright © Materials Research Society 1999

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References

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