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Mechanical stress of the electrical performance of polycrystalline-silicon resistors

Published online by Cambridge University Press:  31 January 2011

N. Nakabayashi ,
H. Ohyama ,
E. Simoen ,
M. Ikegami ,
C. Claeys ,
K. Kobayashi ,
M. Yoneoka  and
K. Miyahara
N. Nakabayashi
Affiliation:
Mitsubishi Electric Company, 997 Miyoshi Nishigoshi Kumamoto, 861–1197 Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659–2 Nishigoshi Kumamoto, 861–1102 Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Ikegami
Affiliation:
Mitsubishi Electric Company, 997 Miyoshi Nishigoshi Kumamoto, 861–1197 Japan
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Kobayashi
Affiliation:
Kumamoto National College of Technology, 2659–2 Nishigoshi Kumamoto, 61–1102 Japan
M. Yoneoka
Affiliation:
Kumamoto National College of Technology, 2659–2 Nishigoshi Kumamoto, 61–1102 Japan
K. Miyahara
Affiliation:
Kumamoto University, 2–39–1 Kurokami, Kumamoto, 860–8555 Japan
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Abstract

Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films doped with different atomic species. Two types of Poly-Si film implanted with boron and phosphorus ions were studied, namely, B-doped films of 400 nm and P-doped films of 250 nm thickness, which were deposited by low-pressure chemical vapor deposition at 620 °C on thermally oxidized silicon wafers. The film doping was done by ion implantation at 50 keV, with a dose of boron and phosphorus of 2 × 1014 and 5.3 × 1014 cm−2, respectively. The Poly-Si films were annealed in a N2 ambient at 1000 °C for 20 min to activate the implanted atoms. A controlled amount of external stress was applied to the silicon wafers to study the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 9 , September 2001 , pp. 2579 - 2582
Copyright
Copyright © Materials Research Society 2001

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