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Lubricity of zinc oxide thin films: Study of deposition parameters and Si as an additive

Published online by Cambridge University Press:  31 January 2011

J. J. Nainaparampil  and
J. S. Zabinski
J. J. Nainaparampil
Affiliation:
Systran Federal Corporation, Wright Patterson Air Force Base, OH 54533
J. S. Zabinski
Affiliation:
Air Force Research Laboratory, Wright Patterson Air Force Base, OH 54533
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Abstract

Zinc oxide preferentially crystallizes into a wurzite structure and has a unique set of properties. There have been numerous studies on doped zinc oxide thin films as an optical coating or as a semiconductor material. However, very little work has been reported on its tribological properties. Recent reports from this laboratory revealed that ZnO has good potential for controlling friction and wear. ZnO has an open structure and favorable coordination number, which permits zinc to freely move to different positions in the crystal lattice and to accommodate external atoms as substitutes. The nature of the substitution and the concentration of Zn interstitials may be used to control tribological performance. In this work, thin films of zinc oxide were deposited by pulsed laser ablation while silicon was added simultaneously by magnetron sputtering. The effects of deposition geometry and oxygen partial pressure on stoichiometry and microstructure were evaluated. It was found that the angle of deposition and oxygen partial pressure control coating texture. Depositions normal to the sample surface, along with 10 mtorr of oxygen, produced strong (002) texture. These conditions were selected for Si-doping studies. The tribological characteristics of Si-doped coatings were evaluated at both room and high temperature. Addition of Si around 7–8% gave a coefficient of friction of about 0.2 at 300 °C, decreasing to 0.13 around 500 °C.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 12 , December 2001 , pp. 3423 - 3429
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Nakanishi, T., 4th International Tribology Conference, Austrib’94 Frontiers in Tribology, Perth, Australia 5–8 Dec. 1994. (Society of Tribologists and Lubrication Engineers, Park Ridge, IL, 1994), pp. 761–766.Google Scholar
2.Centers, P.W., U.S. Patent No. 4 828 729 (1989).Google Scholar
3.Walck, S.D., Zabinski, J.S., McDevitt, N.T., and Bultman, J.E., Thin Solid Films 305, 130 (1997).CrossRefGoogle Scholar
4.Gleiter, H., Nanocrystalline Materials, Progress in Materials Science, Vol. 13 (Pergamon Press, New York, 1989), pp. 223–315.Google Scholar
5.Schiotz, J., Tolla, F.D. Di, and Jacobsen, K.W., Nature 391, 561 (1998).CrossRefGoogle Scholar
6.Avlyanov, J.J., Cooper, M.M., and Dahman, S.S., Electrical Overstress/Electrostatic Discharge Symposium Proceedings. (ESD Assoc, New York, 1999), p. 268.Google Scholar
7.Afanas’ev, V.V., and Stesmans, A., Materials Science & Engineering B, Solid-State Materials Advanced Technology, (Elsevier, 2000), Vol. B71, pp. 56, 56–61. Elsevier, 14 Feb. 2000.Google Scholar
8.MacLachlan, M.M., Ginzburg, M., Coombs, N., Coyle, T.T., Raju, N.N., Greedan, J.J., Ozin, G.G., and Manners, I., Science 287, 1460 (2000).CrossRefGoogle Scholar
9.Zabinski, J.S., Corneille, J., Prasad, S.S., McDevitt, N.N., and Bultman, J.B., J. Mater. Sci. 32, 5313 (1997).CrossRefGoogle Scholar
10.Prasad, S.S. and Zabinski, J.J., Wear 203–204, 498 (1997).CrossRefGoogle Scholar
11.Prasad, S.S., Walck, S.S., and Zabinski, J.J., Thin Solid Films 360, 107 (2000).CrossRefGoogle Scholar
12.Palmer, G.G., Poeppelmeir, K.K., Edwards, D.D., Moriga, T., Mason, T.O., Schindler, J.J., Kannewurf, C.C., in Flat Panel Display Materials III Symposium, edited by Fulks, R.R., Parsons, G.G., Slobodin, D.E., and Yuzuriha, T.T. (Mater. Res. Soc. Symp. Proc. 471, Pittsburgh, PA, 1997), p. 93.Google Scholar
13.Rafla-Yuan, H. and Cordaro, J.J., J. Appl. Phys. 74, 4685CrossRefGoogle Scholar
14.Morinaga, Y., Sakuragi, K., Fujimura, N., and Ito, T., J. Cryst. Growth 174, 691 (1997).CrossRefGoogle Scholar
15.Park, K.K., Ma, D.D., and Kim, K.K., Thin Solid Films 305, 201 (1997).CrossRefGoogle Scholar
16.Quadri, S.B., NRL, Washington, DC (private communication).Google Scholar
17.Prasad, S.S., Nainaparampil, J.J., and Zabinski, J.J., Thin Solid Films, 2001 (submitted).Google Scholar
18.Lee, Y.Y., Kim, S.S., Kim, Y.Y., and Kim, H.H., J. Vac. Sci. Technol A 15, 1194 (1997).CrossRefGoogle Scholar
19.Swalin, R.R., Thermodynamics of Solids (John Wiley & Sons, New York, 1972), pp. 335–341.Google Scholar
20.Islam, M.M., Ghosh, T.B., Chopra, K.K., and Acharya, H.H., Thin Solid Films 280, 20 (1996).CrossRefGoogle Scholar
21.Peterson, M.M., Li, S., and Murray, S.S., J. Mater. Sci. Technol. (China) 13, 99 (1997).Google Scholar
22.Langdon, T.T., Mater. Sci. Forum, 189–190, 31 (1995).CrossRefGoogle Scholar